Datasheet BIDD05N60T (Bourns) - 2
| Fabricante | Bourns |
| Descripción | Insulated Gate Bipolar Transistor (IGBT) |
| Páginas / Página | 10 / 2 — BIDD05N60T Insulated Gate Bipolar Transistor (IGBT) |
| Formato / tamaño de archivo | PDF / 250 Kb |
| Idioma del documento | Inglés |
BIDD05N60T Insulated Gate Bipolar Transistor (IGBT)
Línea de modelo para esta hoja de datos
Versión de texto del documento
BIDD05N60T Insulated Gate Bipolar Transistor (IGBT) Static Electrical Characteristics (TC = 25 °C, Unless Otherwise Specified) Value Parameter Symbol Conditions Unit Min. Typ. Max.
Collector-Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 μA 600 — — V VGE = 15 V, IC = 5 A — 1.5 2.0 TC= 25 °C Collector-Emitter Saturation Voltage VCE(sat) V VGE = 15 V, IC = 5 A — 1.7 — TC= 125 °C IF = 5 A, TC = 25 °C — 1.3 1.8 V Diode Forward On-Voltage VF IF = 5 A, TC = 125 °C — 1.1 — V Gate Threshold Voltage VGE(th) VCE = VGE, IC = 250 μA 3.5 5.5 6.5 V Collector Cut-off Current ICES VGE = 0 V, VCE = 600 V — — 200 μA Gate-Emitter Leakage Current IGES VCE = 0 V, VGE = ± 20 V — — ±400 nA
Dynamic Electrical Characteristics (TC = 25 °C, Unless Otherwise Specified) Value Parameter Symbol Conditions Unit Min. Typ. Max.
Input Capacitance Cies — 340 — VCE = 30 V, VGE = 0 V, Output Capacitance Coes — 26 — pF f = 1 MHz Reverse Transfer Capacitance Cres — 7.6 — Total Gate Charge Qg — 18.5 — VCE = 400 V, VGE = 15 V Gate-Emitter Charge Qge — 5.1 — nC IC = 5.0 A Gate-Collector Charge Qgc — 8.6 —
IGBT Switching Characteristics (Inductive Load, TC = 25 °C, unless otherwise specified) Value Parameter (TC = 25 °C) Symbol Conditions Unit Min. Typ. Max.
Turn-on Delay Time td(on) — 7 — ns Current Rise Time tr — 14 — ns Turn-off Delay Time td(off) — 18 — ns VCE = 400 V, VGE = 15 V Current Fall Time tf — 145 — ns IC = 5.0 A, RG = 10 Ω Turn-on Switching Energy Eon — 0.2 — mJ Turn-off Switching Energy Eoff — 0.07 — mJ Total Switching Energy Ets — 0.27 — mJ Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
Collector-Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 μA 600 — — V VGE = 15 V, IC = 5 A — 1.5 2.0 TC= 25 °C Collector-Emitter Saturation Voltage VCE(sat) V VGE = 15 V, IC = 5 A — 1.7 — TC= 125 °C IF = 5 A, TC = 25 °C — 1.3 1.8 V Diode Forward On-Voltage VF IF = 5 A, TC = 125 °C — 1.1 — V Gate Threshold Voltage VGE(th) VCE = VGE, IC = 250 μA 3.5 5.5 6.5 V Collector Cut-off Current ICES VGE = 0 V, VCE = 600 V — — 200 μA Gate-Emitter Leakage Current IGES VCE = 0 V, VGE = ± 20 V — — ±400 nA
Dynamic Electrical Characteristics (TC = 25 °C, Unless Otherwise Specified) Value Parameter Symbol Conditions Unit Min. Typ. Max.
Input Capacitance Cies — 340 — VCE = 30 V, VGE = 0 V, Output Capacitance Coes — 26 — pF f = 1 MHz Reverse Transfer Capacitance Cres — 7.6 — Total Gate Charge Qg — 18.5 — VCE = 400 V, VGE = 15 V Gate-Emitter Charge Qge — 5.1 — nC IC = 5.0 A Gate-Collector Charge Qgc — 8.6 —
IGBT Switching Characteristics (Inductive Load, TC = 25 °C, unless otherwise specified) Value Parameter (TC = 25 °C) Symbol Conditions Unit Min. Typ. Max.
Turn-on Delay Time td(on) — 7 — ns Current Rise Time tr — 14 — ns Turn-off Delay Time td(off) — 18 — ns VCE = 400 V, VGE = 15 V Current Fall Time tf — 145 — ns IC = 5.0 A, RG = 10 Ω Turn-on Switching Energy Eon — 0.2 — mJ Turn-off Switching Energy Eoff — 0.07 — mJ Total Switching Energy Ets — 0.27 — mJ Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.