Datasheet AP2337 (Diodes) - 8
| Fabricante | Diodes |
| Descripción | 1.0A Single Channel Current-Limited Load Switch |
| Páginas / Página | 10 / 8 — AP2337. 1.0A SINGLE CHANNEL CURRENT-LIMITED LOAD SWITCH. Application Note … |
| Formato / tamaño de archivo | PDF / 289 Kb |
| Idioma del documento | Inglés |
AP2337. 1.0A SINGLE CHANNEL CURRENT-LIMITED LOAD SWITCH. Application Note (cont.). Thermal Protection. Discharge Function
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AP2337 1.0A SINGLE CHANNEL CURRENT-LIMITED LOAD SWITCH Application Note (cont.) Thermal Protection
Thermal protection prevents the IC from damage when the die temperature exceeds safe margins. This mainly occurs when heavy-overload or short-circuit faults are present for extended periods of time. The AP2337 implements a thermal sensing to monitor the operating junction temperature of the power distribution switch. Once the die temperature rises to approximately 150°C, the Thermal protection feature gets activated as follows: The internal thermal sense circuitry turns the power switch off thus preventing the power switch from damage. Hysteresis in the thermal sense circuit allows the device to cool down to approximately 20°C before the output is turned back on. This built-in thermal hysteresis feature is an excellent feature, as it avoids undesirable oscillations of the thermal protection circuit. The switch continues to cycle in this manner until the load
T
fault is removed, resulting in a pulsed output.
UC Discharge Function
When input voltage is pulled, the discharge function is active. The output capacitor is discharged through an internal NMOS that has a discharge resistance of 100Ω. Hence, the output voltage drops down to zero. The time taken for discharge is dependent on the RC time constant of the resistance and the output capacitor. Discharge time is calculated when UVLO falling threshold is reached to output voltage reaching 300mV.
Power Dissipation and Junction Temperature NEW PROD
The low on-resistance of the internal MOSFET allows the small surface-mount packages to pass large current. Using the maximum operating ambient temperature (TA) and RDS(ON), the power dissipation can be calculated by: PD = RDS(ON) × I2 Finally, calculate the junction temperature: TJ = PD x RθJA + TA Where: TA= Ambient temperature °C RθJA = Thermal resistance PD = Total power dissipation
Ordering Information
AP 2337 SA - 7 Package Packing SA : SOT23 7 : Tape & Reel
Packaging 7” Tape and Reel Device Package Code (Note 7) Quantity Part Number Suffix
AP2337SA-7 SA SOT23 3000/Tape & Reel -7 Notes: 7. Pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. AP2337 8 of 10 October 2011 Document number: DS35060 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated
Thermal protection prevents the IC from damage when the die temperature exceeds safe margins. This mainly occurs when heavy-overload or short-circuit faults are present for extended periods of time. The AP2337 implements a thermal sensing to monitor the operating junction temperature of the power distribution switch. Once the die temperature rises to approximately 150°C, the Thermal protection feature gets activated as follows: The internal thermal sense circuitry turns the power switch off thus preventing the power switch from damage. Hysteresis in the thermal sense circuit allows the device to cool down to approximately 20°C before the output is turned back on. This built-in thermal hysteresis feature is an excellent feature, as it avoids undesirable oscillations of the thermal protection circuit. The switch continues to cycle in this manner until the load
T
fault is removed, resulting in a pulsed output.
UC Discharge Function
When input voltage is pulled, the discharge function is active. The output capacitor is discharged through an internal NMOS that has a discharge resistance of 100Ω. Hence, the output voltage drops down to zero. The time taken for discharge is dependent on the RC time constant of the resistance and the output capacitor. Discharge time is calculated when UVLO falling threshold is reached to output voltage reaching 300mV.
Power Dissipation and Junction Temperature NEW PROD
The low on-resistance of the internal MOSFET allows the small surface-mount packages to pass large current. Using the maximum operating ambient temperature (TA) and RDS(ON), the power dissipation can be calculated by: PD = RDS(ON) × I2 Finally, calculate the junction temperature: TJ = PD x RθJA + TA Where: TA= Ambient temperature °C RθJA = Thermal resistance PD = Total power dissipation
Ordering Information
AP 2337 SA - 7 Package Packing SA : SOT23 7 : Tape & Reel
Packaging 7” Tape and Reel Device Package Code (Note 7) Quantity Part Number Suffix
AP2337SA-7 SA SOT23 3000/Tape & Reel -7 Notes: 7. Pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. AP2337 8 of 10 October 2011 Document number: DS35060 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated