Datasheet FS312F-G (Fortune Semiconductor) - 4

FabricanteFortune Semiconductor
DescripciónThe FS312F-G protection IC for Li-ion/polymer rechargeable one-cell batteries maintains high accurate detections of the abnormal cell activities and the corresponding delay time in order to have protections against the events of over charge, over discharge, and over current.
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5. Product Name List. Package Overcharge. detection. voltage. [VOCP] (V) Overcharge. release. [VOCR] (V) Overdischarge

5 Product Name List Package Overcharge detection voltage [VOCP] (V) Overcharge release [VOCR] (V) Overdischarge

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5. Product Name List
Package Overcharge
detection
voltage
[VOCP] (V) Overcharge
release
voltage
[VOCR] (V) Overdischarge
detection
voltage
[VODP] (V) Overdischarge
release
voltage
[VODR] (V) Overcurrent
detection
voltage
[VOI1] (mV) FS312F-G FS312F-G 4.2500.025 4.1450.050 2.900.080 3.00.080 15030 Model FO
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y SOT-23-6 6. Pin Configuration and Package Marking Information
Pin No. Symbol Description 1 OD MOSFET gate connection pin for discharge control 2 CS Input pin for current sense, charger detect 3 OC MOSFET gate connection pin for charge control 4 TD Test pin for reduce delay time 5 VCC Power supply, through a resistor (R1) 6 GND Ground pin 6 W Top Point:Lot No.
Bottom Point:Year
w : week, A~Z & A ~ Z 4 3 12 F 1 3. 1. 2. F 5 2 3