Datasheet BC183 (CDIL) - 2

NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC182, A, B BC183, A, B, C BC184, B, C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T"
C B E
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS DC Current Gain
hFE IC=10µA, VCE=5V
BC182/183
40
BC184
100 IC=2mA, VCE=5V
BC182
120 500
BC183
120 800
BC184
240 800 IC=100mA, VCE=5V
BC182
80
BC183
80
BC184
130
Collector Emitter Saturation Voltage
VCE (sat) IC=10mA, IB=0.5mA 0.25 V *IC=100mA, IB=5mA 0.60 V
Base Emitter Saturation Voltage
VBE (sat) *IC=100mA, IB=5mA 1.2 V
Base Emitter On Voltage
VBE (on) IC=100µA, VCE=5V 0.50 V IC=2mA, VCE=5V 0.55 0.70 V IC=100mA, VCE=5V 0.83 V
SMALL SIGNAL CHARACTERISTICS DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS Transistors Frequency
fT IC=0.5mA, VCE=3V, f=100MHz
BC182
100 MHz
BC183
120 MHz
BC184
140 MHz IC=10mA, VCE=5V, f=100MHz 150 MHz
Output Capacitance
Cob VCB=10V, IE=0, f=1MHz 5.0 pF
Input Capacitance
Cib VBE=0.5V, IC=0, f=1MHz 8.0 pF
Small Signal Current Gain
hfe IC=2mA, VCE=5V, f=1KHz
BC182
125 500
BC183
125 900
BC184
240 900
BC182A/BC183A
125 260
BC182B/183B/184B
240 500
BC183C/184C
450 900 I
Noise Figure
NF C=0.2mA, VCE=5V, RS=2 kΩ, f=30Hz to 15KHz
BC184
4.0 dB IC=0.2mA, VCE=5V, RS=2 kΩ, f=1kHz, F=200Hz
BC182/BC183
10 dB
BC184
4.0 dB
*Pulse Test: Pulse Time 300 µs, Duty Cycle=2% BC182_184Rev_1 201205E
Continental Device India Limited
Data Sheet
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