Datasheet VIA0250DD (Vishay) - 5
| Fabricante | Vishay |
| Descripción | High Thermal Stability Isolation Amplifier in SOP-8 (300 mil) Package |
| Páginas / Página | 13 / 5 — VIA0250DD. THERMAL INFORMATION PARAMETER. SYMBOL. VALUE. UNIT. TYPICAL … |
| Formato / tamaño de archivo | PDF / 206 Kb |
| Idioma del documento | Inglés |
VIA0250DD. THERMAL INFORMATION PARAMETER. SYMBOL. VALUE. UNIT. TYPICAL CHARACTERISTICS
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VIA0250DD
www.vishay.com Vishay Semiconductors
THERMAL INFORMATION PARAMETER SYMBOL VALUE UNIT
Junction to ambient thermal resistance RθJA 86 °C/W Junction to case (top) thermal resistance RθJC(top) 28 °C/W Junction to board thermal resistance RθJB 42 °C/W Junction to top characterization parameter ΨJT 4 °C/W Junction to board characterization parameter ΨJB 42 °C/W
TYPICAL CHARACTERISTICS
(VDD1 = 5 V, VDD2 = 3.3 V, VIN = -250 mV to +250 mV) Axis Title Axis Title 1.20 10000 ) -80 10000 o (dB -85 ti tage a 1.15 n R -90 o 1000 cti 1000 Overvol (V) je -95 e de ne ne R o ne ne ine 1.10 -100 n-M 1st li ode 2nd li o 1st li 2nd li 2nd l m -105 100 on-M 100 Detection Level m 1.05 -110 - Com vo Com - CM -115 V R R 1.00 10 M -120 10 C -40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120 T - Ambient Temperature (°C) T - Ambient Temperature (°C) amb amb Fig. 3 - Common-Mode Overvoltage Detection Level vs. Fig. 5 - Common-Mode Rejection Ratio vs. Ambient Temperature Ambient Temperature Axis Title Axis Title 60 10000 -19.0 10000 50 ) V ) µ 40 -19.2 (µA 1000 1000 30 ltage ( o rrent u ne ne ne ne ine ine C 20 -19.4 1st li 2nd li ias 1st li 2nd li 2nd l Offset V 2nd l B 10 100 put 100 put n In 0 -19.6 - - I I IB OSV -10 -20 10 -19.8 10 -40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120 T - Ambient Temperature (°C) T - Ambient Temperature (°C) amb amb Fig. 4 - Input Offset Voltage vs. Ambient Temperature Fig. 6 - Input Bias Current vs. Ambient Temperature Rev. 1.2, 02-Apr-2025
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Document Number: 80901 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors
THERMAL INFORMATION PARAMETER SYMBOL VALUE UNIT
Junction to ambient thermal resistance RθJA 86 °C/W Junction to case (top) thermal resistance RθJC(top) 28 °C/W Junction to board thermal resistance RθJB 42 °C/W Junction to top characterization parameter ΨJT 4 °C/W Junction to board characterization parameter ΨJB 42 °C/W
TYPICAL CHARACTERISTICS
(VDD1 = 5 V, VDD2 = 3.3 V, VIN = -250 mV to +250 mV) Axis Title Axis Title 1.20 10000 ) -80 10000 o (dB -85 ti tage a 1.15 n R -90 o 1000 cti 1000 Overvol (V) je -95 e de ne ne R o ne ne ine 1.10 -100 n-M 1st li ode 2nd li o 1st li 2nd li 2nd l m -105 100 on-M 100 Detection Level m 1.05 -110 - Com vo Com - CM -115 V R R 1.00 10 M -120 10 C -40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120 T - Ambient Temperature (°C) T - Ambient Temperature (°C) amb amb Fig. 3 - Common-Mode Overvoltage Detection Level vs. Fig. 5 - Common-Mode Rejection Ratio vs. Ambient Temperature Ambient Temperature Axis Title Axis Title 60 10000 -19.0 10000 50 ) V ) µ 40 -19.2 (µA 1000 1000 30 ltage ( o rrent u ne ne ne ne ine ine C 20 -19.4 1st li 2nd li ias 1st li 2nd li 2nd l Offset V 2nd l B 10 100 put 100 put n In 0 -19.6 - - I I IB OSV -10 -20 10 -19.8 10 -40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120 T - Ambient Temperature (°C) T - Ambient Temperature (°C) amb amb Fig. 4 - Input Offset Voltage vs. Ambient Temperature Fig. 6 - Input Bias Current vs. Ambient Temperature Rev. 1.2, 02-Apr-2025
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Document Number: 80901 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000