Datasheet 2P4M (Inchange Semiconductor)
| Fabricante | Inchange Semiconductor |
| Descripción | Plastic Molded Thyristor in TO-202 package |
| Páginas / Página | 1 / 1 — INCHANGE. 2P4M PLASTIC MOLDED THYRISTOR. Features. K A G. Absolute … |
| Formato / tamaño de archivo | PDF / 135 Kb |
| Idioma del documento | Inglés |
INCHANGE. 2P4M PLASTIC MOLDED THYRISTOR. Features. K A G. Absolute maximum ratings(Ta=25. SYMBOL. PARAMETER MIN. UNIT
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Thyristors
INCHANGE 2P4M PLASTIC MOLDED THYRISTOR
Features
・With TO-202 package
K A G
・1cathode 2 anode 3 gate
Absolute maximum ratings(Ta=25
℃
) SYMBOL PARAMETER MIN UNIT
VDRM Repetitive peak off-state voltage 400 (note:RGK=1kΩ) V VRRM Repetitive peak reverse voltage 400 (note:RGK=1kΩ) V 。 I T(AV) On-state current 2(Tc=77℃,θ=180 Single phase(1/2wave) A ITSM Surge non-repetitive on-state current 20 A PGM Peak gate power dissipation 0.5 (f ≥50Hz, Duty ≤10%) W PG(AV) Average gate power dissipation 0.1 W IFGM Peak gate forward current 0.2 (f ≥50Hz, Duty ≤10%) A VRGM Peak gate reverse voltage 6 V Tj Junction temperature -40 to + 125 ℃
Electrical characteristics (Ta=25
℃
) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
IRRM Repetitive peak reverse current VRM=VRRM,Tj=125℃,RGK=1kΩ 100 μA IDRM Repetitive peak off-state current VDM=VDRM,Tj=125℃,RGK=1kΩ 100 μA VTM On-state voltage ITM=4A 1.8 V IGT Gate-trigger current VDM=6V;RL=100Ω,RGK=1kΩ 100 μA VGT Gate-trigger voltage VDM=6V;RL=100Ω,RGK=1kΩ 0.8 V VGD Gate non-trigger voltage VDRM=1/2VDRM,Tj=125℃,RGK=1kΩ 0.2 V IH Holding current VD=24V; RGK=1kΩ,ITM=4A 5 mA Rth(j-c) Thermal resistance Junction to case 10 ℃/W
INCHANGE 2P4M PLASTIC MOLDED THYRISTOR
Features
・With TO-202 package
K A G
・1cathode 2 anode 3 gate
Absolute maximum ratings(Ta=25
℃
) SYMBOL PARAMETER MIN UNIT
VDRM Repetitive peak off-state voltage 400 (note:RGK=1kΩ) V VRRM Repetitive peak reverse voltage 400 (note:RGK=1kΩ) V 。 I T(AV) On-state current 2(Tc=77℃,θ=180 Single phase(1/2wave) A ITSM Surge non-repetitive on-state current 20 A PGM Peak gate power dissipation 0.5 (f ≥50Hz, Duty ≤10%) W PG(AV) Average gate power dissipation 0.1 W IFGM Peak gate forward current 0.2 (f ≥50Hz, Duty ≤10%) A VRGM Peak gate reverse voltage 6 V Tj Junction temperature -40 to + 125 ℃
Electrical characteristics (Ta=25
℃
) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
IRRM Repetitive peak reverse current VRM=VRRM,Tj=125℃,RGK=1kΩ 100 μA IDRM Repetitive peak off-state current VDM=VDRM,Tj=125℃,RGK=1kΩ 100 μA VTM On-state voltage ITM=4A 1.8 V IGT Gate-trigger current VDM=6V;RL=100Ω,RGK=1kΩ 100 μA VGT Gate-trigger voltage VDM=6V;RL=100Ω,RGK=1kΩ 0.8 V VGD Gate non-trigger voltage VDRM=1/2VDRM,Tj=125℃,RGK=1kΩ 0.2 V IH Holding current VD=24V; RGK=1kΩ,ITM=4A 5 mA Rth(j-c) Thermal resistance Junction to case 10 ℃/W