Datasheet IGB03N120H2 (Infineon) - 3
| Fabricante | Infineon |
| Descripción | HighSpeed 2-Technology for 1200V in PG-TO263-3-2 Package |
| Páginas / Página | 12 / 3 — Switching Characteristic, Inductive Load,. Value. Parameter Symbol. … |
| Formato / tamaño de archivo | PDF / 1.2 Mb |
| Idioma del documento | Inglés |
Switching Characteristic, Inductive Load,. Value. Parameter Symbol. Conditions. Unit. min. typ. max. IGBT Characteristic
Línea de modelo para esta hoja de datos
Versión de texto del documento
IGB03N120H2
Switching Characteristic, Inductive Load,
at Tj=25 °C
Value Parameter Symbol Conditions Unit min. typ. max. IGBT Characteristic
Turn-on delay time td(on) Tj=25°C, - 9.2 - ns Rise time tr VCC=800V,IC=3A, - 5.2 - Turn-off delay time t V d ( o f f ) G E =1 5V/ 0 V, - 281 - Fall time t R f G =8 2 Ω , - 29 - L 2)=180nH, Turn-on energy E σ o n 2 ) - 0.14 - mJ Cσ =40pF Turn-off energy Eoff - 0.15 - Energy losses include Total switching energy Ets “tail” and diode 4) - 0.29 - reverse recovery.
Switching Characteristic, Inductive Load,
at Tj=150 °C
Value Parameter Symbol Conditions Unit min. typ. max. IGBT Characteristic
Turn-on delay time td(on) Tj=150°C - 9.4 - ns Rise time tr VCC=800V, - 6.7 - Turn-off delay time t I d ( o f f ) C =3A , - 340 - Fall time t VGE=15V/0V, f - 63 - Turn-on energy E RG=82Ω, o n - 0.22 - mJ L 2)=180nH, Turn-off energy E σ o f f 2 ) - 0.26 - Cσ =40pF Total switching energy Ets Energy losses include - 0.48 - “tail” and diode 3) reverse recovery.
Switching Energy ZVT, Inductive Load Value Parameter Symbol Conditions Unit min. typ. max. IGBT Characteristic
Turn-off energy Eoff VCC=800V, mJ IC=3A, VGE=15V/0V, RG=82Ω, C 2) r =4nF T - 0.05 - j =2 5 ° C T - 0.09 - j = 150 ° C 2) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E 4) Commutation diode from device IKP03N120H2 Power Semiconductors 3 Rev. 2.4 Oct. 07
Switching Characteristic, Inductive Load,
at Tj=25 °C
Value Parameter Symbol Conditions Unit min. typ. max. IGBT Characteristic
Turn-on delay time td(on) Tj=25°C, - 9.2 - ns Rise time tr VCC=800V,IC=3A, - 5.2 - Turn-off delay time t V d ( o f f ) G E =1 5V/ 0 V, - 281 - Fall time t R f G =8 2 Ω , - 29 - L 2)=180nH, Turn-on energy E σ o n 2 ) - 0.14 - mJ Cσ =40pF Turn-off energy Eoff - 0.15 - Energy losses include Total switching energy Ets “tail” and diode 4) - 0.29 - reverse recovery.
Switching Characteristic, Inductive Load,
at Tj=150 °C
Value Parameter Symbol Conditions Unit min. typ. max. IGBT Characteristic
Turn-on delay time td(on) Tj=150°C - 9.4 - ns Rise time tr VCC=800V, - 6.7 - Turn-off delay time t I d ( o f f ) C =3A , - 340 - Fall time t VGE=15V/0V, f - 63 - Turn-on energy E RG=82Ω, o n - 0.22 - mJ L 2)=180nH, Turn-off energy E σ o f f 2 ) - 0.26 - Cσ =40pF Total switching energy Ets Energy losses include - 0.48 - “tail” and diode 3) reverse recovery.
Switching Energy ZVT, Inductive Load Value Parameter Symbol Conditions Unit min. typ. max. IGBT Characteristic
Turn-off energy Eoff VCC=800V, mJ IC=3A, VGE=15V/0V, RG=82Ω, C 2) r =4nF T - 0.05 - j =2 5 ° C T - 0.09 - j = 150 ° C 2) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E 4) Commutation diode from device IKP03N120H2 Power Semiconductors 3 Rev. 2.4 Oct. 07