Datasheet IGB03N120H2 (Infineon) - 8
| Fabricante | Infineon |
| Descripción | HighSpeed 2-Technology for 1200V in PG-TO263-3-2 Package |
| Páginas / Página | 12 / 8 — Figure 17. Typical gate charge. Figure 18. Typical capacitance as a. … |
| Formato / tamaño de archivo | PDF / 1.2 Mb |
| Idioma del documento | Inglés |
Figure 17. Typical gate charge. Figure 18. Typical capacitance as a. Figure 20. Typical turn off behavior, hard
Línea de modelo para esta hoja de datos
Versión de texto del documento
IGB03N120H2 20V D=0.5 100K/W E E 15V AG 0.2 AG U =240V CE LT LT 0.1 VO VO 0.05 TER TER 10V IT 10-1K/W R , ( K / W ) τ , ( s ) IT M 0.02 1.082517 0.000795 M U =960V -E -E CE 0.328671 0.000179 TE 0.01 TE 0.588811 0.004631 , GA , GA 5V R1 R2 V GE 10-2K/W V GE single pulse C1=τ1/R1 C2=τ2/R2 0V 1µs 10µs 100µs 1ms 10ms 100ms 0nC 10nC 20nC 30nC QGE, GATE CHARGE QGE, GATE CHARGE
Figure 17. Typical gate charge Figure 17. Typical gate charge
(IC = 3A) (IC = 3A) 1nF 1000V 3A E C AG 800V iss LT NT VO E 2A C TER 600V URRE AN 100pF C IT -EMIT APAC 400V CTOR , C Coss CTOR 1A C COLLE 200V , COLLE I CE 10pF Crss V CE 0A 0V 0V 10V 20V 30V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VCE, COLLECTOR-EMITTER VOLTAGE tp, PULSE WIDTH
Figure 18. Typical capacitance as a Figure 20. Typical turn off behavior, hard function of collector-emitter voltage switching
(VGE = 0V, f = 1MHz) (VGE=15/0V, RG=82Ω, Tj = 150°C, Dynamic test circuit in Figure E) Power Semiconductors 8 Rev. 2.4 Oct. 07
Figure 17. Typical gate charge Figure 17. Typical gate charge
(IC = 3A) (IC = 3A) 1nF 1000V 3A E C AG 800V iss LT NT VO E 2A C TER 600V URRE AN 100pF C IT -EMIT APAC 400V CTOR , C Coss CTOR 1A C COLLE 200V , COLLE I CE 10pF Crss V CE 0A 0V 0V 10V 20V 30V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VCE, COLLECTOR-EMITTER VOLTAGE tp, PULSE WIDTH
Figure 18. Typical capacitance as a Figure 20. Typical turn off behavior, hard function of collector-emitter voltage switching
(VGE = 0V, f = 1MHz) (VGE=15/0V, RG=82Ω, Tj = 150°C, Dynamic test circuit in Figure E) Power Semiconductors 8 Rev. 2.4 Oct. 07