Selection GuideIv (mcd) [2]ViewingPart No.DiceLens Type@30mA *50mAAngle [1]Min.Typ.2 θ 1/2 BLUE (InGaN) 110 250 AAF5060PBESEEVGA HYPER ORANGE(InGaAIP) WATER CLEAR *650 *1000 100° GREEN (InGaN) 180 350 Notes: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. 2. *Luminous intensity with asterisk is measured at 50mA; Luminous intensity / luminous flux: +/-15%. Electrical / Optical Characteristics at TA=25°CSymbolParameterDeviceTyp.Max.UnitsTest Conditions Blue 465 λpeak Peak Wavelength Hyper Orange 630 nm IF=20mA Green 520 Blue 470 λD [1] Dominant Wavelength Hyper Orange 621 nm IF=20mA Green 525 Blue 25 Δλ1/2 Spectral Line Half-width Hyper Orange 20 nm IF=20mA Green 35 Blue 110 C Capacitance Hyper Orange 25 pF VF=0V;f=1MHz Green 100 Blue 3.7 4.3 VF [2] Forward Voltage Hyper Orange 2.0 2.5 V IF=20mA Green 3.2 4.0 Blue 10 IR Reverse Current Hyper Orange 10 uA VR = 5V Green 10 Notes: 1.Wavelength: +/-1nm. 2. Forward Voltage: +/-0.1V. Absolute Maximum Ratings at TA=25°CParameterBlueHyper OrangeGreenUnits Power dissipation [1] 350 mW DC Forward Current 30 50 50 mA Peak Forward Current [2] 160 195 100 mA Reverse Voltage 5 5 5 V Operating / Storage Temperature -40°C To +85°C Lead Solder Temperature [3] 260°C For 3 Seconds Lead Solder Temperature [4] 260°C For 5 Seconds Notes: 1. Within 350mW at all chips are lightened. 2. 1/10 Duty Cycle, 0.1ms Pulse Width. 3. 2mm below package base. 4. 5mm below package base. SPEC NO: DSAG5858REV NO: V.1 DATE: JUN/22/2006 PAGE: 2 OF6APPROVED: J. Lu CHECKED: Allen Liu DRAWN: W.J.ZHU ERP: 1201002375