Datasheet FKPF12N60 (Fairchild)
| Fabricante | Fairchild |
| Descripción | Bi-Directional Triode Thyristor Planar Silicon |
| Páginas / Página | 7 / 1 — FKPF12N60 / FKPF12N80. Application Explanation. TO-220F. Bi-Directional … |
| Formato / tamaño de archivo | PDF / 144 Kb |
| Idioma del documento | Inglés |
FKPF12N60 / FKPF12N80. Application Explanation. TO-220F. Bi-Directional Triode Thyristor Planar Silicon
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FKPF12N60 / FKPF12N80 FKPF12N60 / FKPF12N80 Application Explanation
• Switching mode power supply, light dimmer, electric flasher unit, hair drier • TV sets, stereo, refrigerator, washing machine • Electric blanket, solenoid driver, small motor control • Photo copier, electric tool 2 1: T1 2: T2 3: Gate 3
TO-220F
1 1 2 3
Bi-Directional Triode Thyristor Planar Silicon Absolute Maximum Ratings
TC=25°C unless otherwise noted
Rating Symbol Parameter Units FKPF12N60 FKPF12N80
VDRM Repetitive Peak Off-State Voltage (Note1 ) 600 800 V
Symbol Parameter Conditions Rating Units
IT (RMS) RMS On-State Current Commercial frequency, sine full wave 360° 12 A conduction, TC=82°C ITSM Surge On-State Current 60Hz sinewave 1 full cycle, peak value, 120 A non-repetitive I2t I2t for Fusing Value corresponding to 1 cycle of halfwave 60 A2s 60Hz, surge on-state current di/dt Critical Rate of Rise of On-State Current IG = 2x IGT, tr ≤ 100ns 50 A/µs PGM Peak Gate Power Dissipation TC = +80°C, Pulse Width = 1.0µs 5 W PG (AV) Average Gate Power Dissipation TC = +80°C, t = 8.3ms 0.5 W VGM Peak Gate Voltage 10 V IGM Peak Gate Current Pulse Width ≤ 1.0µsec; TC = 90°C 2 A TJ Junction Temperature - 40 ~ 125 °C TSTG Storage Temperature - 40 ~ 125 °C Viso Isolation Voltage Ta=25°C, AC 1 minute, T1 T2 G terminal to 1500 V case
Thermal Characteristic Symbol Parameter Test Condition Min. Typ. Max. Units
Rth(J-C) Thermal Resistance Junction to case (Note 4) - - 3.0 °C/W ©2002 Fairchild Semiconductor Corporation Rev. A1, December 2002
• Switching mode power supply, light dimmer, electric flasher unit, hair drier • TV sets, stereo, refrigerator, washing machine • Electric blanket, solenoid driver, small motor control • Photo copier, electric tool 2 1: T1 2: T2 3: Gate 3
TO-220F
1 1 2 3
Bi-Directional Triode Thyristor Planar Silicon Absolute Maximum Ratings
TC=25°C unless otherwise noted
Rating Symbol Parameter Units FKPF12N60 FKPF12N80
VDRM Repetitive Peak Off-State Voltage (Note1 ) 600 800 V
Symbol Parameter Conditions Rating Units
IT (RMS) RMS On-State Current Commercial frequency, sine full wave 360° 12 A conduction, TC=82°C ITSM Surge On-State Current 60Hz sinewave 1 full cycle, peak value, 120 A non-repetitive I2t I2t for Fusing Value corresponding to 1 cycle of halfwave 60 A2s 60Hz, surge on-state current di/dt Critical Rate of Rise of On-State Current IG = 2x IGT, tr ≤ 100ns 50 A/µs PGM Peak Gate Power Dissipation TC = +80°C, Pulse Width = 1.0µs 5 W PG (AV) Average Gate Power Dissipation TC = +80°C, t = 8.3ms 0.5 W VGM Peak Gate Voltage 10 V IGM Peak Gate Current Pulse Width ≤ 1.0µsec; TC = 90°C 2 A TJ Junction Temperature - 40 ~ 125 °C TSTG Storage Temperature - 40 ~ 125 °C Viso Isolation Voltage Ta=25°C, AC 1 minute, T1 T2 G terminal to 1500 V case
Thermal Characteristic Symbol Parameter Test Condition Min. Typ. Max. Units
Rth(J-C) Thermal Resistance Junction to case (Note 4) - - 3.0 °C/W ©2002 Fairchild Semiconductor Corporation Rev. A1, December 2002