Datasheet BC307 (Fairchild) - 2
| Fabricante | Fairchild |
| Descripción | PNP Epitaxial Silicon Transistor in TO-92 Package |
| Páginas / Página | 5 / 2 — BC307/. Electrical Characteristics. Symbol. Parameter. Test Condition. … |
| Formato / tamaño de archivo | PDF / 54 Kb |
| Idioma del documento | Inglés |
BC307/. Electrical Characteristics. Symbol. Parameter. Test Condition. Min. Typ. Max. Units. 308/. 309. hFE Classification
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BC307/ Electrical Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC= -2mA, IB=0
308/
: BC307 -45 V : BC308/309 -25 V BV I
309
CES Collector-Emitter Breakdown Voltage C= -10µA, VBE=0 : BC307 -50 V : BC308/309 -30 V BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V ICES Collector Cut-off Current : BC307 VCE= -45V, VBE=0 -2 -15 nA : BC308/309 VCE= -25V, VBE=0 -2 -15 nA hFE DC Current Gain VCE= -5V, IC= -2mA 120 800 VCE (sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA -0.3 V IC= -100mA, IB= -5mA -0.5 V VBE (sat) Collector-Base Saturation Voltage IC= -10mA, IB= -0.5mA -0.7 V IC= -100mA, IB= -5mA -0.85 V VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -2mA -0.55 -0.62 -0.7 V fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=50MHz 130 MHz Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 6 pF Cib Input Capacitance VEB= -0.5V, IC=0, f=1MHz 12 pF NF Noise Figure : BC307/308 VCE= -5V, IC= -0.2mA, 10 dB : BC309 RG=2KΩ, f=1KHz 4 dB : BC309 VCE= -5V, IC= -0.2mA 2 4 dB RG=2KΩ, f=30~15KHz
hFE Classification
Classification A B C hFE 120 ~ 220 180 ~ 460 380 ~ 800 ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC= -2mA, IB=0
308/
: BC307 -45 V : BC308/309 -25 V BV I
309
CES Collector-Emitter Breakdown Voltage C= -10µA, VBE=0 : BC307 -50 V : BC308/309 -30 V BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V ICES Collector Cut-off Current : BC307 VCE= -45V, VBE=0 -2 -15 nA : BC308/309 VCE= -25V, VBE=0 -2 -15 nA hFE DC Current Gain VCE= -5V, IC= -2mA 120 800 VCE (sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA -0.3 V IC= -100mA, IB= -5mA -0.5 V VBE (sat) Collector-Base Saturation Voltage IC= -10mA, IB= -0.5mA -0.7 V IC= -100mA, IB= -5mA -0.85 V VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -2mA -0.55 -0.62 -0.7 V fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=50MHz 130 MHz Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 6 pF Cib Input Capacitance VEB= -0.5V, IC=0, f=1MHz 12 pF NF Noise Figure : BC307/308 VCE= -5V, IC= -0.2mA, 10 dB : BC309 RG=2KΩ, f=1KHz 4 dB : BC309 VCE= -5V, IC= -0.2mA 2 4 dB RG=2KΩ, f=30~15KHz
hFE Classification
Classification A B C hFE 120 ~ 220 180 ~ 460 380 ~ 800 ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002