Datasheet MMBTA42 (Nexperia) - 2

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Nexperia MMBTA42 NPN high-voltage transistor 6. Ordering information Table 3. Ordering information Type number Package Name Description Version
MMBTA42 SOT23 plastic, surface-mounted package; 3 terminals; 1.9 mm SOT23 pitch; 2.9 mm x 1.3 mm x 1 mm body
7. Marking Table 4. Marking codes Type number Marking code[1]
MMBTA42 7D% [1] % = placeholder for manufacturing site code
8. Limiting values Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 300 V VCEO collector-emitter voltage open base - 300 V VEBO emitter-base voltage open collector - 6 V IC collector current - 100 mA ICM peak collector current - 200 mA IBM peak base current - 100 mA Ptot total power dissipation Tamb ≤ 25 °C [1] - 250 mW Tj junction temperature - 150 °C Tamb ambient temperature -65 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from in free air [1] - - 500 K/W junction to ambient [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. MMBTA42 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2023. All rights reserved
Product data sheet 12 October 2023 2 / 7
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Revision history 14. Legal information Contents