Datasheet MCH6613 (ON Semiconductor) - 6

MCH6613
Ciss, Coss, Crss -VDS 100
7 100 Ciss, Coss, Crss -pF Ciss, Coss, Crss -pF 5 3
2 10 Ciss 7 Coss 5 3
2 10 Ciss 7 Coss 5 3 3 Crss 2 2 Crss 1.0 1.0
0 2 4 6 8 10 12 14 16 18 Drain to Source Voltage, VDS -V -5 Gate to Source Voltage, VGS -V 7
6
5
4
3
2
1 -20 -30
IT00087 [Pch] VDS= -10V
ID= -100mA -8
-7
-6
-5
-4
-3
-2 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Total Gate Charge, Qg -nC IT00040 ASO [Nch] 2 0.2 0 1.6 7 IDP=1.4A(PW≤10μs) 0.6 0.8 1.0 1.2 10m ID=0.35A s 3 DC 2 7
5
3 100 ms ope rat Operation in
this area is
limited by RDS(on). 0.1 Drain Current, ID -A 7 ion ASO [Pch]
1m 0.01 2 1.0 3 0.8 Wh en 5 mo ms 3 ID= -0.2A 2 10
DC -0.1 0m s op era tio 7 n Operation in this
area is limited by RDS(on). 5 7 2 10 2 3 5 IT02877
Drain to Source Voltage, VDS -V
PD -Ta
[Pch, Nch] 1.0 s 10 3 Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm)1unit 2 1.6 IT00088 1m s 1.4 Total Gate Charge, Qg -nC IDP= -0.8A(PW≤10μs) 5
1.0 0.4 -1.0 3 5 -25 -1 0 Drain Current, ID -A -15 VGS -Qg -10
-9 8 -10 Drain to Source Voltage, VDS -V [Nch] VDS=10V
ID=150mA 9 0 20 IT00039 VGS -Qg 10 Allowable Power Dissipation, PD -W [Pch]
f=1MHz 7 5 Gate to Source Voltage, VGS -V Ciss, Coss, Crss -VDS [Nch]
f=1MHz Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm)1unit -0.01
-1.0 2 3 5 7 -10 2 Drain to Source Voltage, VDS -V 3 5
IT02878 un 0.6 ted on cer am ic s ub 0.4 str ate (90 0m m2
✕0 .8m m) 0.2 1u nit 0
0 20 40 60 80 100 120 Ambient Temperature, Ta -°C 140 160 IT02879 No.6920-6/8