Datasheet DMHC4035LSDQ (Diodes) - 5

DMHC4035LSDQ
) 0.08 2.5 ( ) E ) V C 0.07 ( V ( N E A G T GE SI 0.06 TA 2 S L T A E V = 5V GS O OL R I = 5A V V - 0.05 D I = 1mA D D N O L D O OL
T
E I = 250µA H D 0.04 S 1.5
C N
C R E S H E
U OI
U R O V = 10V 0.03 GS
D T
S T H R TH - I = 10A D N E
O A
I T E T A A A
R MT
R 0.02 G 1 G D ,
P
, )
RC
) t h H)T
U
N S ( O 0.01 ( G
W OD
S V GS D V
E F
R
O
0 0.5
N NI
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
R
T , JUNCTION TEMPERATURE ( C ) T , JUNCTION TEMPERATURE (C)
EP
J J Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Junction Temperature
C NW
20 1000
AE VN
Ciss 18
D
) F
A
) 16 p( ) A ( E T C T ( A 14 N N E A E N T R I 12 R C U A C P C U R R 10 T = 150°C A A 100 E E C C C oss T = 25°C R A N 8 O U R C I O T = 125°C OU A T S 6 C S , N Crss , S IS U I J 4 T = 85°C A T = -55°C A , TC 2 0 10 0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40 V , SOURCE-DRAIN VOLTAGE (V) V , DRAIN-SOURCE VOLTAGE (V) SD DS Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance 10 100 ) V = 20V DS V( I = 3.9A D ) EV( 8 G AE 10 T ) GL A( O TA T V N DOL 6 E L V R DC OE R HC U 1 P = 10s W SR C E P = 1s W R N OU I P = 100ms H 4 S A W T- R P = 10ms W EE D T T , A P = 1ms A I D 0.1 W T = 150 150 癈 G °C G J(max) P = 100祍 W , 100µs S 2 T = 2 2 5癈 A °C GS GVV V = 4.5V GS Single Pulse DUT on 1 * MRP Board 0.01 00 2 4 6 8 10 12 14 0.1 1 10 100 V , DRAIN-SOURCE VOLTAGE (V) Q , TOTAL GATE CHARGE (nC) DS g Figure 12 SOA, Safe Operation Area Figure 11 Gate Charge DMHC4035LSDQ 5 of 9 March 2018 Document number: DS37219 Rev. 2 - 2
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