Datasheet CUS10S30 (Toshiba) - 2

CUS10S30 4. Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF(1) IF = 0.1 A (Pulse test)  0.23  V Forward voltage VF(2) IF = 0.5 A (Pulse test)  0.31  V Forward voltage VF(3) IF = 1 A (Pulse test)  0.37 0.45 V Reverse current IR VR = 30 V (Pulse test)  0.2 0.5 mA Total capacitance Ct VR = 0 V, f = 1 MHz  135  pF 5. Marking Fig. 5.1 Marking Marking Code Part Number 8C CUS10S30 6. Usage Considerations • Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design. 7. Land Pattern Dimensions (for reference only) Fig. 7.1 Land Pattern Dimensions for Reference Only (Unit: mm) 2 2014-04-07 Rev.2.0