Datasheet RJU003N03FRA (Rohm) - 2
| Fabricante | Rohm |
| Descripción | 2.5V Drive Nch MOSFET (AEC-Q101 Qualified) in SOT-323 Package |
| Páginas / Página | 13 / 2 — RJU003N03FRA. Thermal resistance. Electrical characteristics (Ta = 25°C). … |
| Formato / tamaño de archivo | PDF / 2.2 Mb |
| Idioma del documento | Inglés |
RJU003N03FRA. Thermal resistance. Electrical characteristics (Ta = 25°C). 20221215 - Rev.002
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RJU003N03FRA
Datasheet l
Thermal resistance
Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - ambient R *2 thJA - - 625 ℃/W l
Electrical characteristics (Ta = 25°C)
Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V voltage (BR)DSS VGS = 0V, ID = 1mA 30 - - V Breakdown voltage ΔV (BR)DSS ID = 1mA - 35.0 - mV/℃ temperature coefficient ΔTj referenced to 25℃ Zero gate voltage I drain current DSS VDS = 30V, VGS = 0V - - 1 μA Gate - Source leakage current IGSS VGS = ±12V, VDS = 0V - - ±10 μA Gate threshold voltage VGS(th) VDS = 10V, ID = 1mA 0.8 - 1.5 V Gate threshold voltage ΔVGS(th) ID = 1mA - -2.04 - mV/℃ temperature coefficient ΔTj referenced to 25℃ VGS = 4.5V, ID = 300mA - 0.8 1.1 Static drain - source R *3 V Ω on - state resistance DS(on) GS = 4V, ID = 300mA - 0.9 1.3 VGS = 2.5V, ID = 300mA - 1.4 1.9 Forward Transfer |Y Admittance fs|*3 VDS = 10V, ID = 300mA 400 - - mS *1 Pw≦10μs, Duty cycle≦1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. 2/10
20221215 - Rev.002
Datasheet l
Thermal resistance
Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - ambient R *2 thJA - - 625 ℃/W l
Electrical characteristics (Ta = 25°C)
Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V voltage (BR)DSS VGS = 0V, ID = 1mA 30 - - V Breakdown voltage ΔV (BR)DSS ID = 1mA - 35.0 - mV/℃ temperature coefficient ΔTj referenced to 25℃ Zero gate voltage I drain current DSS VDS = 30V, VGS = 0V - - 1 μA Gate - Source leakage current IGSS VGS = ±12V, VDS = 0V - - ±10 μA Gate threshold voltage VGS(th) VDS = 10V, ID = 1mA 0.8 - 1.5 V Gate threshold voltage ΔVGS(th) ID = 1mA - -2.04 - mV/℃ temperature coefficient ΔTj referenced to 25℃ VGS = 4.5V, ID = 300mA - 0.8 1.1 Static drain - source R *3 V Ω on - state resistance DS(on) GS = 4V, ID = 300mA - 0.9 1.3 VGS = 2.5V, ID = 300mA - 1.4 1.9 Forward Transfer |Y Admittance fs|*3 VDS = 10V, ID = 300mA 400 - - mS *1 Pw≦10μs, Duty cycle≦1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. 2/10
20221215 - Rev.002