Datasheet PMV65ENEA (Nexperia) - 7

Nexperia PMV65ENEA 40 V, N-channel Trench MOSFET
aaa-022636 10 aaa-022637 10-3 I 10 V 4.5 V D (A) ID 8 (A) 3.2 V min typ max 10-4 6 3 V 4 10-5 2 VGS = 2.5 V 0 10-6 0 1 2 3 4 0 0.5 1 1.5 2 2.5 3 VDS (V) VGS (V) Tj = 25 °C VDS = 5 V
Fig. 6. Output characteristics: drain current as a
Tj = 25 °C
function of drain-source voltage; typical values Fig. 7. Sub-threshold drain current as a function of gate-source voltage
aaa-022638 0.3 aaa-022639 0.3 RDSon 2.6 V 2.8 V 3 V 3.2 V 3.4 V RDSon (Ω) (Ω) 0.2 0.2 Tj = 150 °C 4.5 V 0.1 0.1 VGS = 10 V Tj = 25 °C 0 0 0 2 4 6 8 10 12 0 2 4 6 8 10 ID (A) VGS (V) Tj = 25 °C ID = 2.7 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function of drain current; typical values of gate-source voltage; typical values
PMV65ENEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 28 April 2016 7 / 16
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information