Datasheet PMV65UNEA (Nexperia) - 7
| Fabricante | Nexperia |
| Descripción | 20 V, N-channel Trench MOSFET |
| Páginas / Página | 15 / 7 — Nexperia. PMV65UNEA. 20 V, N-channel Trench MOSFET. Fig. 6. Output … |
| Revisión | 23202103 |
| Formato / tamaño de archivo | PDF / 258 Kb |
| Idioma del documento | Inglés |
Nexperia. PMV65UNEA. 20 V, N-channel Trench MOSFET. Fig. 6. Output characteristics: drain current as a
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Nexperia PMV65UNEA 20 V, N-channel Trench MOSFET
aaa-022686 12 aaa-022687 10-3 4.5 V 2.5 V ID ID (A) (A) min typ max 8 1.8 V 10-4 1.6 V 1.5 V 4 1.4 V 10-5 VGS = 1.2 V 0 10-6 0 1 2 3 4 5 0 0.5 1 1.5 VDS (V) VGS (V) Tj = 25 °C VDS = 5 V
Fig. 6. Output characteristics: drain current as a
Tj = 25 °C
function of drain-source voltage; typical values Fig. 7. Sub-threshold drain current as a function of gate-source voltage
aaa-022688 0.3 aaa-022689 0.3 1.5 V 1.6 V 1.8 V RDSon RDSon (Ω) (Ω) 0.2 0.2 2.5 V 3.0 V VGS = 4.5 V T 0.1 0.1 j = 150 °C Tj = 25 °C 0 0 0 4 8 12 0 2 4 6 8 ID (A) VGS (V) Tj = 25 °C ID = 2.8 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function of drain current; typical values of gate-source voltage; typical values
PMV65UNEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 17 March 2017 7 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information 16. Contents
aaa-022686 12 aaa-022687 10-3 4.5 V 2.5 V ID ID (A) (A) min typ max 8 1.8 V 10-4 1.6 V 1.5 V 4 1.4 V 10-5 VGS = 1.2 V 0 10-6 0 1 2 3 4 5 0 0.5 1 1.5 VDS (V) VGS (V) Tj = 25 °C VDS = 5 V
Fig. 6. Output characteristics: drain current as a
Tj = 25 °C
function of drain-source voltage; typical values Fig. 7. Sub-threshold drain current as a function of gate-source voltage
aaa-022688 0.3 aaa-022689 0.3 1.5 V 1.6 V 1.8 V RDSon RDSon (Ω) (Ω) 0.2 0.2 2.5 V 3.0 V VGS = 4.5 V T 0.1 0.1 j = 150 °C Tj = 25 °C 0 0 0 4 8 12 0 2 4 6 8 ID (A) VGS (V) Tj = 25 °C ID = 2.8 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function of drain current; typical values of gate-source voltage; typical values
PMV65UNEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 17 March 2017 7 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information 16. Contents