Datasheet Si4936DY (Vishay) - 4

Si4936DY Vishay Siliconix
',) 0 )#& #' ').) '$+! &0 *#*+& -* + 0+'0',) '$+! 0.09 100 0.08 10 ) W 0.07 TJ = 150C 0.06 I 1 D = 5.8 A 0.05 TJ = 25C 0.04 0.1 – On-Resistance ( – Source Current (A) 0.03 SI 0.02 0.01 r DS(on) 0.01 0.001 0 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 1.2 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) ") *"'$ '$+! #&!$ ,$* '. ) 0.4 50 0.2 40 –0.0 ID = 250 mA 30 –0.2 ariance (V) V Power (W) 20 –0.4 GS(th)V 10 –0.6 –0.8 0 –50 –25 0 25 50 75 100 125 150 0.01 0.10 1.00 10.00 TJ – Temperature (C) Time (sec) ')%$#/ " )%$ )&*# &+ %( & ,&+#'&0+'0%# &+ 2 1 Duty Cycle = 0.5 ransient 0.2 T Notes: 0.1 fective PDM 0.1 0.05 t1 Thermal Impedance t2 t1 1. Duty Cycle, D = 0.02 t2 2. Per Unit Base = R Normalized Ef thJA = 62.5C/W 3. T (t) JM – TA = PDMZthJA Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com S-49532—Rev. D, 02-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
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