Datasheet SQJA80EP (Vishay) - 4
| Fabricante | Vishay |
| Descripción | Automotive N-Channel 80 V (D-S) 175 °C MOSFET |
| Páginas / Página | 10 / 4 — SQJA80EP. TYPICAL CHARACTERISTICS. On-Resistance vs. Junction … |
| Formato / tamaño de archivo | PDF / 380 Kb |
| Idioma del documento | Inglés |
SQJA80EP. TYPICAL CHARACTERISTICS. On-Resistance vs. Junction Temperature. Source Drain Diode Forward Voltage
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SQJA80EP
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) Axis Title Axis Title 2.5 10000 100 10000 d) I = 10 A e D liz a 2.1 V = 10 V GS 10 ) T = 150 °C (A J 1000 1000 1.7 1 rrent ne ne u ne ine ne ine T = 25 °C J V = 4.5 V GS 1st li 1st li 2nd l 1.3 2nd li 2nd l 0.1 2nd li Resistance (Norm 100 ource C 100 n- S - O - 0.9 I S 0.01 (on) S DR 0.5 10 0.001 10 -50 -25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2 T - Junction Temperature (°C) V - Source-to-Drain Voltage (V) J SD 2nd line 2nd line
On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage
Axis Ax Tit is l Tit e Axis Title 0.05 10000 0.5 10000 ) 0.04 Ω 0.1 ) 1000 I = 5 mA D 1000 0.03 -0.3 ne ne ne ine ne ine ance (V ri Resistance ( a 1st li V 2nd l n- 1st li 2nd l n- 1st li 0.02 2nd li 2nd li 2nd l ) I = 250 μA O 02 O -0.7 D - 100 (th 100 T = 15 = 1 0 °C GS (on) J (on) V S D 0.01 -1.1 R T = 25 = 2 °C J 0.00 10 -1.5 10 0 2 4 6 8 10 1 -50 -25 0 25 50 75 100 125 150 175 V - Gate-to-S G ource Vol o tage t (V age ) T - Temperature (°C) GS J 2nd line 2nd line
On-Resistance vs. Gate-to-Source Voltage Threshold Voltage
Axis Title 105 10000 ) (V 101 I = 1 mA D ltage o 1000 97 ne ne ine ource V 1st li 2nd l 93 2nd li -to-S n 100 rai D - 89 DSV 85 10 -50 -25 0 25 50 75 100 125 150 175 T - Junction Temperature (°C) J 2nd line
Drain Source Breakdown vs. Junction Temperature
S22-0167-Rev. B, 14-Feb-2022
4
Document Number: 75519 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) Axis Title Axis Title 2.5 10000 100 10000 d) I = 10 A e D liz a 2.1 V = 10 V GS 10 ) T = 150 °C (A J 1000 1000 1.7 1 rrent ne ne u ne ine ne ine T = 25 °C J V = 4.5 V GS 1st li 1st li 2nd l 1.3 2nd li 2nd l 0.1 2nd li Resistance (Norm 100 ource C 100 n- S - O - 0.9 I S 0.01 (on) S DR 0.5 10 0.001 10 -50 -25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2 T - Junction Temperature (°C) V - Source-to-Drain Voltage (V) J SD 2nd line 2nd line
On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage
Axis Ax Tit is l Tit e Axis Title 0.05 10000 0.5 10000 ) 0.04 Ω 0.1 ) 1000 I = 5 mA D 1000 0.03 -0.3 ne ne ne ine ne ine ance (V ri Resistance ( a 1st li V 2nd l n- 1st li 2nd l n- 1st li 0.02 2nd li 2nd li 2nd l ) I = 250 μA O 02 O -0.7 D - 100 (th 100 T = 15 = 1 0 °C GS (on) J (on) V S D 0.01 -1.1 R T = 25 = 2 °C J 0.00 10 -1.5 10 0 2 4 6 8 10 1 -50 -25 0 25 50 75 100 125 150 175 V - Gate-to-S G ource Vol o tage t (V age ) T - Temperature (°C) GS J 2nd line 2nd line
On-Resistance vs. Gate-to-Source Voltage Threshold Voltage
Axis Title 105 10000 ) (V 101 I = 1 mA D ltage o 1000 97 ne ne ine ource V 1st li 2nd l 93 2nd li -to-S n 100 rai D - 89 DSV 85 10 -50 -25 0 25 50 75 100 125 150 175 T - Junction Temperature (°C) J 2nd line
Drain Source Breakdown vs. Junction Temperature
S22-0167-Rev. B, 14-Feb-2022
4
Document Number: 75519 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000