Datasheet AOK40B65M3 (Alpha & Omega) - 7
| Fabricante | Alpha & Omega |
| Descripción | 650 V, 40 A Alpha IGBT with soft and fast recovery anti-parallel diode |
| Páginas / Página | 9 / 7 — TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. I rm. I (A). Fig 21: … |
| Formato / tamaño de archivo | PDF / 1.0 Mb |
| Idioma del documento | Inglés |
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. I rm. I (A). Fig 21: Diode Reverse Recovery Charge and Peak
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500 50 600 30 500 25 2000 40 175 C ° 175 C ° 400 T 20 rr
)
1500 30
C ) ) S (n
25 C °
(A (n
300 15
S rr
Qrr 25 C °
rr Q I rm T
1000 20 200 10 175 C Irm ° 175 C S ° 500 10 100 5 25 C ° 25 C ° 0 0 0 0 20 30 40 50 60 70 80 20 30 40 50 60 70 80
I (A) F I (A) F Fig 21: Diode Reverse Recovery Charge and Peak Fig 22: Diode Reverse Recovery Time and Softness Current vs. Conduction Current Factor vs. Conduction Current (V =15V,V =400V, di/dt=200A/
µ
s) GE CE (V =15V,V =400V, di/dt=200A/
µ
s) GE CE
3000 90 600 30 2500 75 500 25 175 C ° 175 C ° Trr 2000 60 400 20
) C )
Qrr
) S (n
1500 45
(A (n
300 15
S rr
25 C °
rr Q I rm T
1000 30 200 25 C ° 10 I 175 C ° 175 C ° rm S 500 15 100 5 25 C ° 25 C ° 0 0 0 0 200 300 400 500 600 700 800 200 300 400 500 600 700 800
di/ i d / t t ( A ( / A
µ
S
µ
) di/ i d / t t ( A ( / A
µ
S
µ
) Fig 23: Diode Reverse Recovery Charge and Peak Fig 24: Diode Reverse Recovery Time and Softness Current vs. di/dt Factor vs. di/dt (V =15V,V =400V,I =40A) GE CE F (V =15V,V =400V,I =40A) GE CE F
Rev.1.0: April 2015
www.aosmd.com
Page 7 of 9
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500 50 600 30 500 25 2000 40 175 C ° 175 C ° 400 T 20 rr
)
1500 30
C ) ) S (n
25 C °
(A (n
300 15
S rr
Qrr 25 C °
rr Q I rm T
1000 20 200 10 175 C Irm ° 175 C S ° 500 10 100 5 25 C ° 25 C ° 0 0 0 0 20 30 40 50 60 70 80 20 30 40 50 60 70 80
I (A) F I (A) F Fig 21: Diode Reverse Recovery Charge and Peak Fig 22: Diode Reverse Recovery Time and Softness Current vs. Conduction Current Factor vs. Conduction Current (V =15V,V =400V, di/dt=200A/
µ
s) GE CE (V =15V,V =400V, di/dt=200A/
µ
s) GE CE
3000 90 600 30 2500 75 500 25 175 C ° 175 C ° Trr 2000 60 400 20
) C )
Qrr
) S (n
1500 45
(A (n
300 15
S rr
25 C °
rr Q I rm T
1000 30 200 25 C ° 10 I 175 C ° 175 C ° rm S 500 15 100 5 25 C ° 25 C ° 0 0 0 0 200 300 400 500 600 700 800 200 300 400 500 600 700 800
di/ i d / t t ( A ( / A
µ
S
µ
) di/ i d / t t ( A ( / A
µ
S
µ
) Fig 23: Diode Reverse Recovery Charge and Peak Fig 24: Diode Reverse Recovery Time and Softness Current vs. di/dt Factor vs. di/dt (V =15V,V =400V,I =40A) GE CE F (V =15V,V =400V,I =40A) GE CE F
Rev.1.0: April 2015
www.aosmd.com
Page 7 of 9