□ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.E-02 3 1.E-03 2.4 60A 1.E-04 ) V =1350V CE (A 1.8 )(V)(S 1.E-05 DES 30A I CV 1.2 1.E-06 5A V =1080V CE 1.E-07 0.6 IF=1A 1.E-08 0 0 50 100 150 200 0 25 50 75 100 125 150 175 Temperature (°C )Temperature (°C )Fig 19: Diode Reverse Leakage Current vs.Fig 20: Diode Forward voltage vs. JunctionJunction TemperatureTemperature 10 D=T /T on In descending order t T =T +P .Z .R n J,PK C DM θJC θJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse ie Rθ =0.44 C/W JC ° se c 1 nnrataTisdseelizl R 0.1 aarm PD orm eNhCTJ θ 0.01 Z Ton T Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s)Figurer 21: NoN rmr alized Maximum Trar nsient Thermr al Impedance forr IGBG TB 10 D=T /T In descending order on t T =T +P .Z .R D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse n J,PK C DM θJC θJC ie Rθ =1.2 C/W JC ° se c 1 nnrataTisdseelizl R 0.1 aarm PD orm eNhCTJ θ 0.01 Single Pulse Z Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s)Figure 22: Normalized Maximum Transient Thermal Impedance for Diode Rev.2.0: January 2015 www.aosmd.com Page 7 of 8