Datasheet MDF11N65B (Magnachip)
| Fabricante | Magnachip |
| Descripción | N-Channel MOSFET 650V, 12A, 0.65Ω in TO-220F package |
| Páginas / Página | 6 / 1 — MDF11N65B. 1 N65. N-Channel MOSFET 650V, 12A, 0.65Ω. General Description. … |
| Formato / tamaño de archivo | PDF / 1.1 Mb |
| Idioma del documento | Inglés |
MDF11N65B. 1 N65. N-Channel MOSFET 650V, 12A, 0.65Ω. General Description. Features. nnel. MOS. Applications. FET
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M DF 1 MDF11N65B 1 N65 N-Channel MOSFET 650V, 12A, 0.65Ω B N -c General Description Features ha nnel
These N-channel MOSFET are produced using advanced VDS = 650V Magnachip’s MOSFET Technology, which provides low on- ID = 12A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) ≤ 0.65Ω @ VGS = 10V
MOS
quality. These devices are suitable device for SMPS, high Speed
Applications FET
switching and general purpose applications. Power Supply
6
PFC
5
High Current, High Speed Switching
0 V
D G TO-220F MDF Series S
Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V TC=25oC 12* A Continuous Drain Current ID TC=100oC 7.7* A Pulsed Drain Current(1) IDM 48* A TC=25oC 49.6 W Power Dissipation PD Derate above 25 oC 0.4 W/oC Repetitive Avalanche Energy(1) EAR 18.1 mJ Peak Diode Recovery dv/dt(3) dv/dt 4.5 V/ns Single Pulse Avalanche Energy(4) EAS 750 mJ Junction and Storage Temperature Range TJ, Tstg -55~150 oC * Id limited by maximum junction temperature
Thermal Characteristics Characteristics Symbol Rating Unit
Thermal Resistance, Junction-to-Ambient(1) RθJA 62.5 oC/W Thermal Resistance, Junction-to-Case(1) RθJC 2.52 Jan. 2021. Version 1.2 1 Magnachip Semiconductor Ltd.
These N-channel MOSFET are produced using advanced VDS = 650V Magnachip’s MOSFET Technology, which provides low on- ID = 12A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) ≤ 0.65Ω @ VGS = 10V
MOS
quality. These devices are suitable device for SMPS, high Speed
Applications FET
switching and general purpose applications. Power Supply
6
PFC
5
High Current, High Speed Switching
0 V
D G TO-220F MDF Series S
Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V TC=25oC 12* A Continuous Drain Current ID TC=100oC 7.7* A Pulsed Drain Current(1) IDM 48* A TC=25oC 49.6 W Power Dissipation PD Derate above 25 oC 0.4 W/oC Repetitive Avalanche Energy(1) EAR 18.1 mJ Peak Diode Recovery dv/dt(3) dv/dt 4.5 V/ns Single Pulse Avalanche Energy(4) EAS 750 mJ Junction and Storage Temperature Range TJ, Tstg -55~150 oC * Id limited by maximum junction temperature
Thermal Characteristics Characteristics Symbol Rating Unit
Thermal Resistance, Junction-to-Ambient(1) RθJA 62.5 oC/W Thermal Resistance, Junction-to-Case(1) RθJC 2.52 Jan. 2021. Version 1.2 1 Magnachip Semiconductor Ltd.