Datasheet CPC3710 (Littelfuse) - 2
| Fabricante | Littelfuse |
| Descripción | N-CH DEPL MOSFET 250V 10 OHMS SOT-89 TR | Series: N-Channel Depletion-Mode MOSFETs |
| Páginas / Página | 6 / 2 — CPC3710. Absolute Maximum Ratings @ 25ºC. Parameter. Ratings. Units. … |
| Formato / tamaño de archivo | PDF / 139 Kb |
| Idioma del documento | Inglés |
CPC3710. Absolute Maximum Ratings @ 25ºC. Parameter. Ratings. Units. Electrical Characteristics @ 25ºC (Unless Otherwise Noted)
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INTEGRATED CIRCUITS DIVISION
CPC3710 Absolute Maximum Ratings @ 25ºC Parameter Ratings Units
Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the Drain-to-Source Voltage 250 VP device. Functional operation of the device at conditions beyond Gate-to-Source Voltage ±15 VP those indicated in the operational sections of this data sheet is Pulsed Drain Current 600 mA not implied. Total Package Dissipation 1 1.4 W Junction Temperature 150 ºC Operational Temperature -55 to +125 ºC Storage Temperature -55 to +125 ºC 1 Mounted on FR4 board 1"x1"x0.062"
Electrical Characteristics @ 25ºC (Unless Otherwise Noted) Parameter Symbol Conditions Min Typ Max Units
Drain-to-Source Breakdown Voltage V V = -5V, I =100µA 250 - - V (BR)DSX GS D P Gate-to-Source Off Voltage V V = 5V, I =1mA -1.6 - -3.9 V GS(off) DS D Change in V with Temperatures dV /dT V = 5V, I =1A - - 4.5 mV / ºC GS(off) GS(off) DS D Gate Body Leakage Current I V =±15V, V =0V - - 100 nA GSS GS DS V = -5V, V =250V - - 1 µA Drain-to-Source Leakage Current I GS DS D(off) V = -5V, V =200V, T =125ºC - - 1 mA GS DS A Saturated Drain-to-Source Current I V = 0V, V =15V 220 - - mA DSS GS DS Static Drain-to-Source On-State Resistance R V = 0V, I =220mA - - 10 DS(on) GS D Change in R with Temperatures dR / dT V = 0V, I =220mA - - 1.1 % / ºC DS(on) DS(on) GS D Forward Transconductance G I = 100mA, V = 10V 225 - - m FS D DS Input Capacitance C 100 350 ISS V = -5V GS Common Source Output Capacitance C V = 25V - 30 80 pF OSS DS f= 1MHz Reverse Transfer Capacitance C 15 40 RSS Turn-On Delay Time t 23 35 d(on) V = 25V DD Rise Time t 8 20 r I = 150mA D - ns V = 0V to -10V Turn-Off Delay Time t GS 17 25 d(off) R = 50 gen Fall time t 70 80 f Source-Drain Diode Voltage Drop V V = -5V, I = 150mA - 0.6 1.8 V SD GS SD Thermal Resistance (Junction to Ambient) R - - 90 - ºC/W JA VDD
Switching Waveform & Test Circuit
RL 0V 90% PULSE GENERATOR INPUT OUTPUT 10% -10V Rgen ton toff td(on) t t f d(off) tr D.U.T. VDS INPUT 90% 90% OUTPUT 0V 10% 10%
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R02 Document Outline CPC3710a Disclaimer
CPC3710 Absolute Maximum Ratings @ 25ºC Parameter Ratings Units
Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the Drain-to-Source Voltage 250 VP device. Functional operation of the device at conditions beyond Gate-to-Source Voltage ±15 VP those indicated in the operational sections of this data sheet is Pulsed Drain Current 600 mA not implied. Total Package Dissipation 1 1.4 W Junction Temperature 150 ºC Operational Temperature -55 to +125 ºC Storage Temperature -55 to +125 ºC 1 Mounted on FR4 board 1"x1"x0.062"
Electrical Characteristics @ 25ºC (Unless Otherwise Noted) Parameter Symbol Conditions Min Typ Max Units
Drain-to-Source Breakdown Voltage V V = -5V, I =100µA 250 - - V (BR)DSX GS D P Gate-to-Source Off Voltage V V = 5V, I =1mA -1.6 - -3.9 V GS(off) DS D Change in V with Temperatures dV /dT V = 5V, I =1A - - 4.5 mV / ºC GS(off) GS(off) DS D Gate Body Leakage Current I V =±15V, V =0V - - 100 nA GSS GS DS V = -5V, V =250V - - 1 µA Drain-to-Source Leakage Current I GS DS D(off) V = -5V, V =200V, T =125ºC - - 1 mA GS DS A Saturated Drain-to-Source Current I V = 0V, V =15V 220 - - mA DSS GS DS Static Drain-to-Source On-State Resistance R V = 0V, I =220mA - - 10 DS(on) GS D Change in R with Temperatures dR / dT V = 0V, I =220mA - - 1.1 % / ºC DS(on) DS(on) GS D Forward Transconductance G I = 100mA, V = 10V 225 - - m FS D DS Input Capacitance C 100 350 ISS V = -5V GS Common Source Output Capacitance C V = 25V - 30 80 pF OSS DS f= 1MHz Reverse Transfer Capacitance C 15 40 RSS Turn-On Delay Time t 23 35 d(on) V = 25V DD Rise Time t 8 20 r I = 150mA D - ns V = 0V to -10V Turn-Off Delay Time t GS 17 25 d(off) R = 50 gen Fall time t 70 80 f Source-Drain Diode Voltage Drop V V = -5V, I = 150mA - 0.6 1.8 V SD GS SD Thermal Resistance (Junction to Ambient) R - - 90 - ºC/W JA VDD
Switching Waveform & Test Circuit
RL 0V 90% PULSE GENERATOR INPUT OUTPUT 10% -10V Rgen ton toff td(on) t t f d(off) tr D.U.T. VDS INPUT 90% 90% OUTPUT 0V 10% 10%
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R02 Document Outline CPC3710a Disclaimer