Datasheet MAT04 (Analog Devices) - 2

MAT04–SPECIFICATIONS ELECTRICAL CHARACTERISTICS (@ TA = 25
ⴗ
C unless otherwise noted. Each transistor is individually tested. For matching parameters (VOS, IOS,
∆
hFE) each dual transistor combination is verified to meet stated limits. All tests made at endpoints unless otherwise noted.) MAT04E MAT04F Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
Current Gain hFE 10 µA ≤ IC ≤ 1 mA 0 V ≤ VCB ≤ 30 V1 400 800 300 600 Current Gain Match ∆hFE IC = 100 µA 0 V ≤ VCB ≤ 30 V2 0.5 2 1 4 % Offset Voltage VOS 10 µA ≤ IC ≤ 1 mA 0 V ≤ VCB ≤ 30 V3 50 200 100 400 µV Offset Voltage Change vs. ∆VOS/∆IC 10 µA ≤ IC ≤ 1 mA Collector Current VCB = 0 V3 5 25 10 50 µV Offset Voltage Change vs. VCB ∆VOS/∆VCB 10 µA ≤ IC ≤ 1 mA 0 V ≤ VCB ≤ 30 V3 50 100 100 200 µV Bulk Emitter Resistance rBE 10 µA ≤ IC ≤ 1 mA VCB = 0 V4 0.4 0.6 0.4 0.6 Ω Input Bias Current IB IC = 100 µA 0 V ≤ VCB ≤ 30 V 125 250 165 330 nA Input Offset Current IOS IC = 100 µA; VCB = 0 V 0.6 5 2 13 nA Breakdown Voltage BVCEO IC = 10 µA 40 40 V Collector Saturation Voltage VCE(SAT) IB = 100 µA; IC = 1 mA 0.03 0.06 0.03 0.06 V Collector-Base Leakage Current ICBO VCB = 40 V 5 5 pA Noise Voltage Density en VCB = 0 V; fO = 10 Hz 2 3 2 4 nV/√Hz IC = 1 mA; fO = 100 Hz 1.8 2.5 1.8 3 nV/√Hz fO = 1 kHz5 1.8 2.5 1.8 3 nV/√Hz Gain Bandwidth Product fT IC = 1 mA; VCE = 10 V 300 300 MHz Output Capacitance COBO VCB = 15 V; IE = 0 f = 1 MHz 10 10 pF Input Capacitance CEBO VBE = 0 V; IC = 0 f = 1 MHz 40 40 pF NOTES 1Current gain measured at IC = 10 µA, 100 µA and 1 mA. ∆ MIN IB h 2Current gain match is defined as: ∆h FE = 100( )( ) FE IC 3Measured at IC = 10 µA and guaranteed by design over the specified range of IC. 4Guaranteed by design. 5Sample tested. Specifications subject to change without notice. –2– REV. D