Datasheet THAT 380G (THAT Corporation)
| Fabricante | THAT Corporation |
| Descripción | Low-Noise Matched Transistor Array Die |
| Páginas / Página | 4 / 1 — Low-Noise Matched. Transistor Array Die. FEATURES. APPLICATIONS. … |
| Formato / tamaño de archivo | PDF / 106 Kb |
| Idioma del documento | Inglés |
Low-Noise Matched. Transistor Array Die. FEATURES. APPLICATIONS. Description
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Low-Noise Matched Transistor Array Die
THAT 380G
FEATURES APPLICATIONS
y 4 Matched NPN and 4 Matched PNP • Microphone Preamplifiers y Monolithic Construction y Low Noise • Current Sources - 0.75 nV/ √Hz (PNP) - 0.8 nV/ √Hz (NPN) • Current Mirrors y High Speed - fT = 350 MHz (NPN) - f • Log/Antilog Amplifiers T = 325 MHz (PNP) y Excellent Matching – 500 μV typical between devices of same gender • Multipliers y Dielectrically Isolated for low crosstalk, high DC isolation, and • Servos high temp operation y 36V VCEO
Description
The THAT 380G is a large-geometry, is not required for normal operation, though the 8-transistor, monolithic NPN/PNP array intended for substrate should be grounded to optimize speed and use in multichip modules, hybrids, and chip-on- minimize crosstalk. board applications. The individual devices exhibit both high speed and low noise, and are well-matched While not guaranteed to meet its datasheet between transistors of the same gender. specifications outside the commercial temperature range, the transistors on the 380G will typically Fabricated in a dielectrically isolated, comple- operate at much higher temperatures than ordinary mentary bipolar process, each transistor is electri- junction-isolated devices with similar packing cally insulated from the others by a layer of density. insulating oxide (not the reverse-biased PN junctions used in conventional arrays) and exhibit inter-device Quad transistor arrays in DIP and SO packages crosstalk and DC isolation similar to that expected with similar performance characteristics are also from discrete transistors. The resulting low collector- available from THAT Corporation. Please contact us to-substrate capacitance produces a typical NPN f directly or through your local distributor for more T of 350MHz (325 MHz for the PNPs). Substrate biasing information. T A TH 312 Die Order Thickness Number 1 17C 18B 0.014” 380G14 Figure 1. THAT 380G die layout Table 1. Ordering Information THAT Corporation; 45 Sumner Street; Milford, MA 01757-1656; USA Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com Copyright © 2014, THAT Corporation. Document 600042 Rev 03 Document Outline Home Features & Applications Description Ordering Information Specifications Absolute Maximum Ratings NPN Electrical Characteristics PNP Electrical Characteristics Revision History
THAT 380G
FEATURES APPLICATIONS
y 4 Matched NPN and 4 Matched PNP • Microphone Preamplifiers y Monolithic Construction y Low Noise • Current Sources - 0.75 nV/ √Hz (PNP) - 0.8 nV/ √Hz (NPN) • Current Mirrors y High Speed - fT = 350 MHz (NPN) - f • Log/Antilog Amplifiers T = 325 MHz (PNP) y Excellent Matching – 500 μV typical between devices of same gender • Multipliers y Dielectrically Isolated for low crosstalk, high DC isolation, and • Servos high temp operation y 36V VCEO
Description
The THAT 380G is a large-geometry, is not required for normal operation, though the 8-transistor, monolithic NPN/PNP array intended for substrate should be grounded to optimize speed and use in multichip modules, hybrids, and chip-on- minimize crosstalk. board applications. The individual devices exhibit both high speed and low noise, and are well-matched While not guaranteed to meet its datasheet between transistors of the same gender. specifications outside the commercial temperature range, the transistors on the 380G will typically Fabricated in a dielectrically isolated, comple- operate at much higher temperatures than ordinary mentary bipolar process, each transistor is electri- junction-isolated devices with similar packing cally insulated from the others by a layer of density. insulating oxide (not the reverse-biased PN junctions used in conventional arrays) and exhibit inter-device Quad transistor arrays in DIP and SO packages crosstalk and DC isolation similar to that expected with similar performance characteristics are also from discrete transistors. The resulting low collector- available from THAT Corporation. Please contact us to-substrate capacitance produces a typical NPN f directly or through your local distributor for more T of 350MHz (325 MHz for the PNPs). Substrate biasing information. T A TH 312 Die Order Thickness Number 1 17C 18B 0.014” 380G14 Figure 1. THAT 380G die layout Table 1. Ordering Information THAT Corporation; 45 Sumner Street; Milford, MA 01757-1656; USA Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com Copyright © 2014, THAT Corporation. Document 600042 Rev 03 Document Outline Home Features & Applications Description Ordering Information Specifications Absolute Maximum Ratings NPN Electrical Characteristics PNP Electrical Characteristics Revision History