Datasheet IXFH26N50 (Inchange Semiconductor)
| Fabricante | Inchange Semiconductor |
| Descripción | N-Channel MOSFET Transistor in TO-247 package |
| Páginas / Página | 2 / 1 — isc N-Channel MOSFET Transistor. IXFH26N50. FEATURES. DESCRIPTION. … |
| Formato / tamaño de archivo | PDF / 396 Kb |
| Idioma del documento | Inglés |
isc N-Channel MOSFET Transistor. IXFH26N50. FEATURES. DESCRIPTION. ABSOLUTE MAXIMUM RATINGS(Ta=25. SYMBOL. PARAMETER. VALUE. UNIT
Línea de modelo para esta hoja de datos
Versión de texto del documento
isc N-Channel MOSFET Transistor IXFH26N50 FEATURES
·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
DESCRIPTION
·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃
) SYMBOL PARAMETER VALUE UNIT
VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 26 A IDM Drain Current-Single Pluse 104 A PD Total Dissipation @TC=25℃ 300 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃
THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 0.42 ℃/W
isc website
：
www.iscsemi.com
1
isc & iscsemi is registered trademark
Document Outline isc N-Channel MOSFET Transistor I FEATURES DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) ELECTRICAL CHARACTERISTICS
·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
DESCRIPTION
·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃
) SYMBOL PARAMETER VALUE UNIT
VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 26 A IDM Drain Current-Single Pluse 104 A PD Total Dissipation @TC=25℃ 300 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃
THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 0.42 ℃/W
isc website
：
www.iscsemi.com
1
isc & iscsemi is registered trademark
Document Outline isc N-Channel MOSFET Transistor I FEATURES DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) ELECTRICAL CHARACTERISTICS