Datasheet DXTN78100CFGQ (Diodes) - 5
| Fabricante | Diodes |
| Descripción | NPN, 100V, 4A, PowerDI3333-8 |
| Páginas / Página | 8 / 5 — DXTN78100CFGQ. Typical Electrical Characteristics. Fig. 7 h v I. Fig. 8 … |
| Formato / tamaño de archivo | PDF / 545 Kb |
| Idioma del documento | Inglés |
DXTN78100CFGQ. Typical Electrical Characteristics. Fig. 7 h v I. Fig. 8 V. v I. CE(sat). Fig. 9 V. Fig. 10 V. BE(on). Fig. 11 V
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DXTN78100CFGQ Typical Electrical Characteristics
(@TA = +25°C, unless otherwise specified.) 700 1 I /I =10 V =2V C B CE 600 150°C 500 85°C ) 150°C ni 400 V a ( G 25°C )t 0.1 sa(
FE
300 h CE 85°C -55°C V 200 25°C 100 -55°C 0 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 7 h v I Fig. 8 V v I FE C CE(sat) C
1 1.0 T T a=25°C A = 25C V =2V CE -55°C 0.8 25°C ) V ) 0.6 ( ) I /I =50 V t ( sa 0.1 C B ) ( n o( 85°C CE E 0.4 V B V 150°C I /I =10 C B 0.2 I /I =20 C B 0.01 0.0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 9 V v I Fig. 10 V v I CE(sat) C BE(on) C
1.2 I /I =10 C B f=1MHz 1.0 ) -55°C Cibo 100 pF( 0.8 ) 25°C ce V( )t an 0.6 t sa( E B aci V 150°C 10 0.4 ap 85°C C Cobo 0.2 0.0 1 0.001 0.01 0.1 1 10 0 10 20 30 40 I Collector Current (A) V Reverse Voltage (V) C
R Fig. 11 V v I Fig. 12 Typical Junction Capacitance BE(sat) C
DXTN78100CFGQ 5 of 8 August 2025 Document number: DS46965 Rev. 2 - 2
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© 2025 Copyright Diodes Incorporated. All Rights Reserved.
(@TA = +25°C, unless otherwise specified.) 700 1 I /I =10 V =2V C B CE 600 150°C 500 85°C ) 150°C ni 400 V a ( G 25°C )t 0.1 sa(
FE
300 h CE 85°C -55°C V 200 25°C 100 -55°C 0 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 7 h v I Fig. 8 V v I FE C CE(sat) C
1 1.0 T T a=25°C A = 25C V =2V CE -55°C 0.8 25°C ) V ) 0.6 ( ) I /I =50 V t ( sa 0.1 C B ) ( n o( 85°C CE E 0.4 V B V 150°C I /I =10 C B 0.2 I /I =20 C B 0.01 0.0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 9 V v I Fig. 10 V v I CE(sat) C BE(on) C
1.2 I /I =10 C B f=1MHz 1.0 ) -55°C Cibo 100 pF( 0.8 ) 25°C ce V( )t an 0.6 t sa( E B aci V 150°C 10 0.4 ap 85°C C Cobo 0.2 0.0 1 0.001 0.01 0.1 1 10 0 10 20 30 40 I Collector Current (A) V Reverse Voltage (V) C
R Fig. 11 V v I Fig. 12 Typical Junction Capacitance BE(sat) C
DXTN78100CFGQ 5 of 8 August 2025 Document number: DS46965 Rev. 2 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.