Datasheet DXTN78060DFG (Diodes) - 4

DXTN78060DFG Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 100 — — V IC = 100µA Collector-Emitter Breakdown Voltage (Note 10) BVCEO 60 — — V IC = 10mA Emitter-Collector Breakdown Voltage BVECO 5 — — V IE = 100µA Emitter-Base Breakdown Voltage BVEBO 8 — — V IE = 100µA — — 100 nA VCB = 100V Collector Cut-off Current ICBO — — 10 µA VCB = 100V, TA = +125°C Collector Cut-off Current ICES — — 300 nA VCE = 48V Emitter Cut-off Current IEBO — — 50 nA VEB = 7V — 55 — mV IC = 100mA, IB = 1mA — 65 100 mV IC = 1A, IB = 20mA — 30 45 mV IC = 1A, IB = 100mA Collector-Emitter Saturation Voltage (Note 10) VCE(sat) — 110 145 mV IC = 2A, IB = 40mA — 85 125 mV IC = 3A, IB = 150mA — 135 170 mV IC = 6A, IB = 600mA — 870 1,000 mV IC = 3A, IB = 150mA Base-Emitter Saturation Voltage (Note 10) VBE(sat) — 1 1.1 V IC = 6A, IB = 600mA — 765 850 mV IC = 3A, VCE = 2V Base-Emitter Turn-On Voltage (Note 10) VBE(on) — 845 950 mV IC = 6A, VCE = 2V 250 370 — — IC = 10mA, VCE = 2V 300 370 550 — IC = 100mA, VCE = 2V 240 340 — — IC = 1A, VCE = 2V DC Current Gain (Note 10) hFE 180 290 — — IC = 2A, VCE = 2V 100 170 — — IC = 3A, VCE = 2V 25 55 — — IC = 6A, VCE = 2V Input Capacitance Cibo — 350 — pF VEB = 0.5V, f = 1MHz Output Capacitance Cobo — 18 — pF VCB = 10V, f = 1MHz V Current Gain-Bandwidth Product f CE = 10V, IC = 100mA, T 150 250 — MHz f = 50MHz td — 11.5 — ns Turn-On Time tr — 75 — ns VCC = 10V, IC = 3A, ts — 295 — ns IB1 = -IB2 = 300mA Turn-Off Time tf — 30 — ns Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Fig 6. Timing Waveform
DXTN78060DFG 4 of 8 August 2025 Document number: DS46860 Rev. 2 - 2
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