Datasheet DXTN80060DFGQ (Diodes) - 5
| Fabricante | Diodes |
| Descripción | NPN, 60V, 6.5A, PowerDI3333-8 |
| Páginas / Página | 8 / 5 — DXTN80060DFGQ. Typical Electrical Characteristics. Fig. 7 h v I. Fig. 8 … |
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| Idioma del documento | Inglés |
DXTN80060DFGQ. Typical Electrical Characteristics. Fig. 7 h v I. Fig. 8 V. v I. CE(sat). Fig. 9 V. Fig. 10 V. BE(on). Fig. 11 V
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DXTN80060DFGQ Typical Electrical Characteristics
(@TA = +25°C, unless otherwise specified.) 700 1 V =2V I /I =20 C B CE 600 150°C 500 85°C ) ni 400 25°C V a ( G )t 0.1 85°C sa 300 ( h
FE
-55°C V CE 150°C 200 25°C 100 -55°C 0 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 7 h v I Fig. 8 V v I FE C CE(sat) C
1 1.0 Ta=25°C V =2V CE -55°C 0.8 25°C 0.1 ) I /I =50 C B V ) 0.6 ( ) V t ( sa ( )no( 85°C E 0.4 V CE I /I =10 0.01 C B V B 150°C I /I =20 C B 0.2 0.001 0.0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 9 V v I Fig. 10 V v I CE(sat) C BE(on) C
1.2 I /I =20 C B f=1MHz 1.0 ) -55°C pF( Cibo 0.8 ) ce V( 25°C )t an 0.6 100 t sa(E aci V B 0.4 150°C ap 85°C C 0.2 Cobo 0.0 10 0.001 0.01 0.1 1 10 0 10 20 30 40 I Collector Current (A) V Reverse Voltage (V) C
R Fig. 11 V v I Fig. 12 Typical Junction Capacitance BE(sat) C
DXTN80060DFGQ 5 of 8 August 2025 Document number: DS46958 Rev. 2 - 2
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© 2025 Copyright Diodes Incorporated. All Rights Reserved.
(@TA = +25°C, unless otherwise specified.) 700 1 V =2V I /I =20 C B CE 600 150°C 500 85°C ) ni 400 25°C V a ( G )t 0.1 85°C sa 300 ( h
FE
-55°C V CE 150°C 200 25°C 100 -55°C 0 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 7 h v I Fig. 8 V v I FE C CE(sat) C
1 1.0 Ta=25°C V =2V CE -55°C 0.8 25°C 0.1 ) I /I =50 C B V ) 0.6 ( ) V t ( sa ( )no( 85°C E 0.4 V CE I /I =10 0.01 C B V B 150°C I /I =20 C B 0.2 0.001 0.0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 9 V v I Fig. 10 V v I CE(sat) C BE(on) C
1.2 I /I =20 C B f=1MHz 1.0 ) -55°C pF( Cibo 0.8 ) ce V( 25°C )t an 0.6 100 t sa(E aci V B 0.4 150°C ap 85°C C 0.2 Cobo 0.0 10 0.001 0.01 0.1 1 10 0 10 20 30 40 I Collector Current (A) V Reverse Voltage (V) C
R Fig. 11 V v I Fig. 12 Typical Junction Capacitance BE(sat) C
DXTN80060DFGQ 5 of 8 August 2025 Document number: DS46958 Rev. 2 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.