Datasheet DXTN80100CFG (Diodes) - 5
| Fabricante | Diodes |
| Descripción | NPN, 100V, 5.5A, PowerDI3333-8 |
| Páginas / Página | 8 / 5 — DXTN80100CFG. Typical Electrical Characteristics. Fig. 7 h v I. Fig. 8 V. … |
| Formato / tamaño de archivo | PDF / 532 Kb |
| Idioma del documento | Inglés |
DXTN80100CFG. Typical Electrical Characteristics. Fig. 7 h v I. Fig. 8 V. v I. CE(sat). Fig. 9 V. Fig. 10 V. BE(on). Fig. 11 V
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DXTN80100CFG Typical Electrical Characteristics
(@TA = +25°C, unless otherwise specified.) 600 1 I /I =10 V =2V C B CE 500 150°C 150°C 85°C 400 0.1 ) ni 25°C V a ( 85°C G 300 t) sa(
FE
h E -55°C C 25°C 200 V 0.01 -55°C 100 0 0.001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 7 h v I Fig. 8 V v I FE C CE(sat) C
1 1.0 Ta=25°C V =2V CE -55°C 0.8 I /I =50 0.1 C B 25°C ) V ) 0.6 ( V t) ( sa ) ( n E o( C E 0.4 85°C V I /I =10 B 0.01 C B V I /I =20 150°C C B 0.2 0.001 0.0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 9 V v I Fig. 10 V v I CE(sat) C BE(on) C
1.2 I /I =10 C B f=1MHz 1.0 ) Cibo -55°C pF( 0.8 ) ce V 25°C ( t) an 0.6 100 t sa( E B aci V 150°C 0.4 ap 85°C C Cobo 0.2 0.0 10 0.001 0.01 0.1 1 10 0 20 40 60 80 100 I Collector Current (A) V Reverse Voltage (V) C
R Fig. 11 V v I Fig. 12 Typical Junction Capacitance BE(sat) C
DXTN80100CFG 5 of 8 August 2025 Document number: DS46855 Rev. 2 - 2
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© 2025 Copyright Diodes Incorporated. All Rights Reserved.
(@TA = +25°C, unless otherwise specified.) 600 1 I /I =10 V =2V C B CE 500 150°C 150°C 85°C 400 0.1 ) ni 25°C V a ( 85°C G 300 t) sa(
FE
h E -55°C C 25°C 200 V 0.01 -55°C 100 0 0.001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 7 h v I Fig. 8 V v I FE C CE(sat) C
1 1.0 Ta=25°C V =2V CE -55°C 0.8 I /I =50 0.1 C B 25°C ) V ) 0.6 ( V t) ( sa ) ( n E o( C E 0.4 85°C V I /I =10 B 0.01 C B V I /I =20 150°C C B 0.2 0.001 0.0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 9 V v I Fig. 10 V v I CE(sat) C BE(on) C
1.2 I /I =10 C B f=1MHz 1.0 ) Cibo -55°C pF( 0.8 ) ce V 25°C ( t) an 0.6 100 t sa( E B aci V 150°C 0.4 ap 85°C C Cobo 0.2 0.0 10 0.001 0.01 0.1 1 10 0 20 40 60 80 100 I Collector Current (A) V Reverse Voltage (V) C
R Fig. 11 V v I Fig. 12 Typical Junction Capacitance BE(sat) C
DXTN80100CFG 5 of 8 August 2025 Document number: DS46855 Rev. 2 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.