Datasheet DXTP78030DFGQ (Diodes) - 4

DXTP78030DFGQ Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -40 — — V IC = -100µA Collector-Emitter Breakdown Voltage (Note 10) BVCEO -30 — — V IC = -10mA Emitter-Collector Breakdown Voltage BVECO -5 — — V IE = -100µA Emitter-Base Breakdown Voltage BVEBO -8 — — V IE = -100µA — — -100 nA V Collector Cutoff Current CB = -30V ICBO — — -10 µA VCB = -30V, TA = +125°C Collector Cutoff Current ICES — — -300 nA VCE = -24V Emitter Cutoff Current IEBO — — -50 nA VEB = -7V — -40 — mV IC = -100mA, IB = -1mA — -50 -70 mV IC = -1A, IB = -20mA Collector-Emitter Saturation Voltage (Note 10) VCE(sat) — -25 -40 mV IC = -1A, IB = -100mA — -140 -170 mV IC = -3A, IB = -60mA — -170 -250 mV IC = -6.5A, IB = -325mA — -830 -950 mV IC = -3A, IB = -80mA Base-Emitter Saturation Voltage (Note 10) VBE(sat) — -940 -1,100 mV IC = -6.5A, IB = -375mA — -760 -900 mV IC = -3A, VCE = -2V Base-Emitter Turn-On Voltage (Note 10) VBE(on) — -800 -900 mV IC = -6.5A, VCE = -2V 250 440 — — IC = -10mA, VCE = -2V 300 430 550 — IC = -100mA, VCE = -2V 220 355 — — IC = -1A, VCE = -2V DC Current Gain (Note 10) hFE 175 275 — — IC = -2A, VCE = -2V 150 235 — — IC = -3A, VCE = -2V 90 135 — — IC = -6.5A, VCE = -2V Input Capacitance Cibo — 305 — pF VEB = 0.5V, f = 1MHz Output Capacitance Cobo — 24 — pF VCB = 10V, f = 1MHz Current Gain-Bandwidth Product fT 200 315 — MHz VCE = -10V, IC = -100mA f = 50MHz td — 11.5 — ns Turn-On Time tr — 35 — ns VCC = -10V, IC = -3A ts — 120 — ns IB1 = -IB2 = -300mA Turn-Off Time tf — 6.5 — ns Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Fig 6. Timing Waveform
DXTP78030DFGQ 4 of 8 August 2025 Document number: DS46960 Rev. 2 - 2
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