Datasheet PAM8403 (Diodes) - 4
| Fabricante | Diodes |
| Descripción | 3W Stereo Class D in SOP-16 package |
| Páginas / Página | 11 / 4 — PAM8403. Electrical Characteristics. Symbol. Parameter. Test Conditions. … |
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| Idioma del documento | Inglés |
PAM8403. Electrical Characteristics. Symbol. Parameter. Test Conditions. Min. Typ. Max. Units. www.diodes.com
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PAM8403 Electrical Characteristics
(@TA = +25°C, VDD = 5V, Gain = 24dB, RL = 8Ω, unless otherwise specified.)
Symbol Parameter Test Conditions Min Typ Max Units
VDD Supply Voltage 2.5 5.5 V VDD = 5.0V 3.2 THD+N = 10%, f = 1KHz, RL = 4Ω VDD = 3.6V 1.6 W VDD = 3.2V 1.3 VDD = 5.0V 2.5 THD+N = 1%, f = 1KHz, RL = 4Ω VDD = 3.6V 1.3 W VDD = 3.2V 0.85 PO Output Power VDD = 5.0V 1.8 THD+N = 10%, f = 1KHz, RL = 8Ω VDD = 3.6V 0.9 W VDD = 3.2V 0.6 VDD = 5.0V 1.4 THD+N = 1%, f = 1KHz, RL = 8Ω VDD = 3.6V 0.72 W VDD = 3.2V 0.45 VDD = 5.0V, PO = 1W, RL = 8Ω 0.15 f = 1kHz % Total Harmonic Distortion Plus VDD = 3.6V, PO = 0.1W, RL = 8Ω 0.11 THD+N Noise VDD = 5.0V, PO = 0.5W, RL = 4Ω 0.15 f = 1kHz % VDD = 3.6V, PO = 0.2W, RL = 4Ω 0.11 GV Closed Loop Gain VDD = 3V to 5V 24 dB V f = 100Hz -59 PSRR Power Supply Ripple Rejection DD = 5.0V, Inputs AC-Grounded dB with CIN = 0.47µF f = 1kHz -58 VDD = 5.0V, PO = 0.5W, RL = 8Ω, CS Crosstalk f = 1kHz -95 dB GV = 20db SNR Signal-to-Noise Ratio VDD = 5.0V, VORMS = 1V, GV = 20db f = 1kHz 80 dB V No A-Weighting 100 V DD = 5.0V, Inputs AC-Grounded N Output Noise µV with CIN = 0.47µF A-Weighting 150 Dyn Dynamic Range VDD = 5.0V, THD = 1% f = 1kHz 90 dB R 87 η L = 8Ω, THD = 10% Efficiency f = 1kHz % RL = 4Ω, THD = 10% 83 VDD = 5.0V 16 IQ Quiescent Current VDD = 3.6V No Load 10 mA VDD = 3.0V 8 IMUTE Muting Current VDD = 5.0V VMUTE = 0.3V 3.5 mA ISD Shutdown Current VDD = 2.5V to 5.5V VSD = 0.3V < 1 µA Static Drain-to-Source PMOS 180 RDS(ON) I mΩ On-State Resistor DS = 500mA, VGS = 5V NMOS 140 fSW Switching Frequency VDD = 3.0V to 5.0V 260 kHz VOS Output Offset Voltage VIN = 0V, VDD = 5.0V 10 mV VIH Enable Input High Voltage VDD = 5.0V 1.5 1.4 V VIL Enable Input Low Voltage VDD = 5.0V 0.7 0.4 VIH MUTE Input High Voltage VDD = 5.0V 1.5 1.4 V VIL MUTE Input Low Voltage VDD = 5.0V 0.7 0.4 OTP Over Temperature Protection 140 V No Load, Junction Temperature VDD = 5.0V OTH Over Temperature Hysterisis 30 V PAM8403 4 of 11 September 2020 Document number: DS36439 Rev. 2 - 3
www.diodes.com
© Diodes Incorporated Document Outline Pin Assignments Description Features Applications Package Outline Dimensions Suggested Pad Layout
(@TA = +25°C, VDD = 5V, Gain = 24dB, RL = 8Ω, unless otherwise specified.)
Symbol Parameter Test Conditions Min Typ Max Units
VDD Supply Voltage 2.5 5.5 V VDD = 5.0V 3.2 THD+N = 10%, f = 1KHz, RL = 4Ω VDD = 3.6V 1.6 W VDD = 3.2V 1.3 VDD = 5.0V 2.5 THD+N = 1%, f = 1KHz, RL = 4Ω VDD = 3.6V 1.3 W VDD = 3.2V 0.85 PO Output Power VDD = 5.0V 1.8 THD+N = 10%, f = 1KHz, RL = 8Ω VDD = 3.6V 0.9 W VDD = 3.2V 0.6 VDD = 5.0V 1.4 THD+N = 1%, f = 1KHz, RL = 8Ω VDD = 3.6V 0.72 W VDD = 3.2V 0.45 VDD = 5.0V, PO = 1W, RL = 8Ω 0.15 f = 1kHz % Total Harmonic Distortion Plus VDD = 3.6V, PO = 0.1W, RL = 8Ω 0.11 THD+N Noise VDD = 5.0V, PO = 0.5W, RL = 4Ω 0.15 f = 1kHz % VDD = 3.6V, PO = 0.2W, RL = 4Ω 0.11 GV Closed Loop Gain VDD = 3V to 5V 24 dB V f = 100Hz -59 PSRR Power Supply Ripple Rejection DD = 5.0V, Inputs AC-Grounded dB with CIN = 0.47µF f = 1kHz -58 VDD = 5.0V, PO = 0.5W, RL = 8Ω, CS Crosstalk f = 1kHz -95 dB GV = 20db SNR Signal-to-Noise Ratio VDD = 5.0V, VORMS = 1V, GV = 20db f = 1kHz 80 dB V No A-Weighting 100 V DD = 5.0V, Inputs AC-Grounded N Output Noise µV with CIN = 0.47µF A-Weighting 150 Dyn Dynamic Range VDD = 5.0V, THD = 1% f = 1kHz 90 dB R 87 η L = 8Ω, THD = 10% Efficiency f = 1kHz % RL = 4Ω, THD = 10% 83 VDD = 5.0V 16 IQ Quiescent Current VDD = 3.6V No Load 10 mA VDD = 3.0V 8 IMUTE Muting Current VDD = 5.0V VMUTE = 0.3V 3.5 mA ISD Shutdown Current VDD = 2.5V to 5.5V VSD = 0.3V < 1 µA Static Drain-to-Source PMOS 180 RDS(ON) I mΩ On-State Resistor DS = 500mA, VGS = 5V NMOS 140 fSW Switching Frequency VDD = 3.0V to 5.0V 260 kHz VOS Output Offset Voltage VIN = 0V, VDD = 5.0V 10 mV VIH Enable Input High Voltage VDD = 5.0V 1.5 1.4 V VIL Enable Input Low Voltage VDD = 5.0V 0.7 0.4 VIH MUTE Input High Voltage VDD = 5.0V 1.5 1.4 V VIL MUTE Input Low Voltage VDD = 5.0V 0.7 0.4 OTP Over Temperature Protection 140 V No Load, Junction Temperature VDD = 5.0V OTH Over Temperature Hysterisis 30 V PAM8403 4 of 11 September 2020 Document number: DS36439 Rev. 2 - 3
www.diodes.com
© Diodes Incorporated Document Outline Pin Assignments Description Features Applications Package Outline Dimensions Suggested Pad Layout