Datasheet MB10F (Diodes) - 2
| Fabricante | Diodes |
| Descripción | 0.8A Surface Mount Glass Passivated Bridge Rectifier in MBF package |
| Páginas / Página | 5 / 2 — MB10F. Maximum Ratings. Characteristic. Symbol. Value. Unit. ID O. PC … |
| Formato / tamaño de archivo | PDF / 570 Kb |
| Idioma del documento | Inglés |
MB10F. Maximum Ratings. Characteristic. Symbol. Value. Unit. ID O. PC Thermal Characteristics. NW AE. VN D. Electrical Characteristics. Min
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MB10F Maximum Ratings
(@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage V 1,000 V
N
RWM DC Blocking Voltage V
O
R
I
RMS Reverse Voltage VR(RMS) 700 V
T
Average Rectified Output Current (Note 5) @ T 0.5
A
A = +125° C IO A @T 0.8
M
A = +110° C
RT
Non-Repetitive Peak Forward Surge Current, 8.3ms I Single Half Sine-Wave Superimposed on Rated Load FSM 30 A
OC
2 2 2
FU
I t Rating for Fusing (1ms < t < 8.3ms) I t 3.74 A S
N ID O D RE PC Thermal Characteristics NW AE Characteristic Symbol Value Unit VN D
Typical Thermal Resistance, Junction to Ambient (Note 6) R (Per Element) θJA 63 °C/W
A
Typical Thermal Resistance, Junction to Lead (Per Element) RθJL 39 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 7) V(BR)R 1,000 — — V IR = 5μA Forward Voltage (Per Element) VF — 0.94 1.1 V IF = 0.8A, TA = +25°C — 0.2 5 VR = 1,000V, TA = +25°C Leakage Current (Note 7) (Per Element) IR — μA 14 500 VR = 1,000V, TA = +125°C Total Capacitance (Per Element) CT — 8 — pF VR = 4V, f = 1.0MHz Notes: 5. Device mounted on FR-4 substrate, 1"*1", 2oz, single-sided, PC boards with 0.1"*0.15" copper pad. 6. Device mounted on FR-4 substrate, 1"*1", 2oz, single-sided, PC boards with 0.56"*0.73" copper pad. 7. Short duration pulse test used to minimize self-heating effect. MB10F 2 of 5 March 2017 Document number: DS39046 Rev. 3 - 2
www.diodes.com
© Diodes Incorporated
(@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage V 1,000 V
N
RWM DC Blocking Voltage V
O
R
I
RMS Reverse Voltage VR(RMS) 700 V
T
Average Rectified Output Current (Note 5) @ T 0.5
A
A = +125° C IO A @T 0.8
M
A = +110° C
RT
Non-Repetitive Peak Forward Surge Current, 8.3ms I Single Half Sine-Wave Superimposed on Rated Load FSM 30 A
OC
2 2 2
FU
I t Rating for Fusing (1ms < t < 8.3ms) I t 3.74 A S
N ID O D RE PC Thermal Characteristics NW AE Characteristic Symbol Value Unit VN D
Typical Thermal Resistance, Junction to Ambient (Note 6) R (Per Element) θJA 63 °C/W
A
Typical Thermal Resistance, Junction to Lead (Per Element) RθJL 39 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 7) V(BR)R 1,000 — — V IR = 5μA Forward Voltage (Per Element) VF — 0.94 1.1 V IF = 0.8A, TA = +25°C — 0.2 5 VR = 1,000V, TA = +25°C Leakage Current (Note 7) (Per Element) IR — μA 14 500 VR = 1,000V, TA = +125°C Total Capacitance (Per Element) CT — 8 — pF VR = 4V, f = 1.0MHz Notes: 5. Device mounted on FR-4 substrate, 1"*1", 2oz, single-sided, PC boards with 0.1"*0.15" copper pad. 6. Device mounted on FR-4 substrate, 1"*1", 2oz, single-sided, PC boards with 0.56"*0.73" copper pad. 7. Short duration pulse test used to minimize self-heating effect. MB10F 2 of 5 March 2017 Document number: DS39046 Rev. 3 - 2
www.diodes.com
© Diodes Incorporated