Datasheet J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113 (ON Semiconductor) - 2

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J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113 ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Symbol Parameter Test Condition Min Max Unit OFF CHARACTERISTICS
V(BR)GSS Gate−Source Breakdown Voltage IG = −1.0 mA, VDS = 0 −35 − V IGSS Gate Reverse Current VGS = −15 V, VDS = 0 − −1.0 nA VGS(off) Gate−Source Cut−Off Voltage VDS = 5 V, ID = 1.0 mA 111 −3.0 −10.0 V 112 −1.0 −5.0 113 −0.5 −3.0 ID(off) Drain Cutoff Leakage Current VDS = 5.0 V, VGS = −10 V − 1.0 nA
ON CHARACTERISTICS
IDSS Zero−Gate Voltage Drain Current (Note 5) VDS = 15 V, VGS = 0 111 20 − mA 112 5.0 − 113 2.0 − rDS(on) Drain−Source On Resistance VDS ≤ 0.1 V, VGS = 0 111 − 30 W 112 − 50 113 − 100
SMALL SIGNAL CHARACTERISTICS
Cdg(on) Drain−Gate &Source−Gate On Capacitance VDS = 0, VGS = 0, f = 1.0 MHz − 28 pF Csg(on) Cdg(off) Drain−Gate Off Capacitance VDS = 0, VGS = −10 V, f = 1.0 MHz − 5.0 pF Csg(off) Source−Gate Off Capacitance VDS = 0, VGS = −10 V, f = 1.0 MHz − 5.0 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse test: pulse width ≤300 ms, duty cycle ≤2%.
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