Datasheet ATP613 (ON Semiconductor) - 4
| Fabricante | ON Semiconductor |
| Páginas / Página | 7 / 4 — ATP613. VGS -Qg 10 3. 2 8 Drain Current, ID -A Gate-to-Source Voltage, … |
| Formato / tamaño de archivo | PDF / 390 Kb |
| Idioma del documento | Inglés |
ATP613. VGS -Qg 10 3. 2 8 Drain Current, ID -A Gate-to-Source Voltage, VGS -V 9 7
Línea de modelo para esta hoja de datos
Versión de texto del documento
ATP613
VGS -Qg 10 3
2 8 Drain Current, ID -A Gate-to-Source Voltage, VGS -V 9 7
6
5
4
3 6 8 10 12 Total Gate Charge, Qg -nC PD -Tc 16 50
40
30
20
10 0 20 40 60 80 100 3 5 7 10 120 Case Temperature, Tc -°C 140 160 IT16211 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -V 5 7 IT16935 EAS -Ta 120 60 0 2 IT16209 70 s 10
μs
0μ
s Tc=25°C
Single pulse 0.01
1.0 Avalanche Energy derating factor -% Allowable Power Dissipation, PD -W 80 14 10
m
10 s
0m
op
s
era
tio
n 10 1m Operation in
this area is
limited by RDS(on). 3
2 3
2
4 DC 1.0
7
5 1
2 ID=5.5A 3
2 0.1
7
5 0 IDP=19A (PW≤10μs) 10
7
5 2 0 ASO 5 VDS=200V
ID=5.5A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -°C 150 175
IT16212 No. A1903-4/7
VGS -Qg 10 3
2 8 Drain Current, ID -A Gate-to-Source Voltage, VGS -V 9 7
6
5
4
3 6 8 10 12 Total Gate Charge, Qg -nC PD -Tc 16 50
40
30
20
10 0 20 40 60 80 100 3 5 7 10 120 Case Temperature, Tc -°C 140 160 IT16211 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -V 5 7 IT16935 EAS -Ta 120 60 0 2 IT16209 70 s 10
μs
0μ
s Tc=25°C
Single pulse 0.01
1.0 Avalanche Energy derating factor -% Allowable Power Dissipation, PD -W 80 14 10
m
10 s
0m
op
s
era
tio
n 10 1m Operation in
this area is
limited by RDS(on). 3
2 3
2
4 DC 1.0
7
5 1
2 ID=5.5A 3
2 0.1
7
5 0 IDP=19A (PW≤10μs) 10
7
5 2 0 ASO 5 VDS=200V
ID=5.5A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -°C 150 175
IT16212 No. A1903-4/7