Datasheet 2N4921G, 2N4922G, 2N4923G (ON Semiconductor) - 2
| Fabricante | ON Semiconductor |
| Descripción | 1.0 Ampere General Purpose Power Transistors 40−80 Volts, 30 Watts |
| Páginas / Página | 7 / 2 — 2N4921G, 2N4922G, 2N4923G. ELECTRICAL CHARACTERISTICS. Characteristic. … |
| Formato / tamaño de archivo | PDF / 232 Kb |
| Idioma del documento | Inglés |
2N4921G, 2N4922G, 2N4923G. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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2N4921G, 2N4922G, 2N4923G ELECTRICAL CHARACTERISTICS
(TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 4) VCEO(sus) Vdc (IC = 0.1 Adc, IB = 0) 2N4921G 40 − 2N4922G 60 − 2N4923G 80 − Collector Cutoff Current ICEO mAdc (VCE = 20 Vdc, IB = 0) 2N4921G − 0.5 (VCE = 30 Vdc, IB = 0) 2N4922G − 0.5 (VCE = 40 Vdc, IB = 0) 2N4923G − 0.5 Collector Cutoff Current ICEX mAdc (VCE = Rated VCEO, VEB(off) = 1.5 Vdc) − 0.1 (VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125_C − 0.5 Collector Cutoff Current ICBO mAdc (VCB = Rated VCB, IE = 0) − 0.1 Emitter Cutoff Current IEBO mAdc (VEB = 5.0 Vdc, IC = 0) − 1.0
ON CHARACTERISTICS
DC Current Gain (Note 4) hFE − (IC = 50 mAdc, VCE = 1.0 Vdc) 40 − (IC = 500 mAdc, VCE = 1.0 Vdc) 30 150 (IC = 1.0 Adc, VCE = 1.0 Vdc) 10 − Collector−Emitter Saturation Voltage (Note 4) VCE(sat) Vdc (IC = 1.0 Adc, IB = 0.1 Adc) − 0.6 Base−Emitter Saturation Voltage (Note 4) VBE(sat) Vdc (IC = 1.0 Adc, IB = 0.1 Adc) − 1.3 Base−Emitter On Voltage (Note 4) VBE(on) Vdc (IC = 1.0 Adc, VCE = 1.0 Vdc) − 1.3
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) 3.0 − Output Capacitance Cob pF (VCB = 10 Vdc, IE = 0, f = 100 kHz) − 100 Small−Signal Current Gain hfe − (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 25 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: PW ≈ 300 ms, Duty Cycle ≈ 2.0%.
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2N4921G, 2N4922G, 2N4923G ELECTRICAL CHARACTERISTICS
(TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 4) VCEO(sus) Vdc (IC = 0.1 Adc, IB = 0) 2N4921G 40 − 2N4922G 60 − 2N4923G 80 − Collector Cutoff Current ICEO mAdc (VCE = 20 Vdc, IB = 0) 2N4921G − 0.5 (VCE = 30 Vdc, IB = 0) 2N4922G − 0.5 (VCE = 40 Vdc, IB = 0) 2N4923G − 0.5 Collector Cutoff Current ICEX mAdc (VCE = Rated VCEO, VEB(off) = 1.5 Vdc) − 0.1 (VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125_C − 0.5 Collector Cutoff Current ICBO mAdc (VCB = Rated VCB, IE = 0) − 0.1 Emitter Cutoff Current IEBO mAdc (VEB = 5.0 Vdc, IC = 0) − 1.0
ON CHARACTERISTICS
DC Current Gain (Note 4) hFE − (IC = 50 mAdc, VCE = 1.0 Vdc) 40 − (IC = 500 mAdc, VCE = 1.0 Vdc) 30 150 (IC = 1.0 Adc, VCE = 1.0 Vdc) 10 − Collector−Emitter Saturation Voltage (Note 4) VCE(sat) Vdc (IC = 1.0 Adc, IB = 0.1 Adc) − 0.6 Base−Emitter Saturation Voltage (Note 4) VBE(sat) Vdc (IC = 1.0 Adc, IB = 0.1 Adc) − 1.3 Base−Emitter On Voltage (Note 4) VBE(on) Vdc (IC = 1.0 Adc, VCE = 1.0 Vdc) − 1.3
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) 3.0 − Output Capacitance Cob pF (VCB = 10 Vdc, IE = 0, f = 100 kHz) − 100 Small−Signal Current Gain hfe − (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 25 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: PW ≈ 300 ms, Duty Cycle ≈ 2.0%.
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