Datasheet BD6xxx (STMicroelectronics) - 5

FabricanteSTMicroelectronics
DescripciónComplementary power Darlington transistors
Páginas / Página12 / 5 — BD6xxx. Electrical characteristics. Table 3. Electrical characteristics …
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BD6xxx. Electrical characteristics. Table 3. Electrical characteristics (continued). Symbol. Parameter. Test conditions. Min. Typ. Max

BD6xxx Electrical characteristics Table 3 Electrical characteristics (continued) Symbol Parameter Test conditions Min Typ Max

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BD6xxx Electrical characteristics Table 3. Electrical characteristics (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit
for BD677, BD678, BD679, BD680, BD681, BD682 I h (1) C = 1.5 A_ _ VCE = 3 V FE DC current gain 750 for BD677A, BD678A, BD679A, BD680A IC = 2 A_ _ VCE = 3 V 1. Pulsed duration = 300 ms, duty cycle ≥1.5%. Note: For PNP types voltage e current values are negative. 5/12 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Absolute maximum ratings Table 2. Absolute maximum ratings 2 Electrical characteristics Table 3. Electrical characteristics 2.1 Typical characteristic (curves) Figure 2. DC current gain (NPN) Figure 3. DC current gain (PNP) Figure 4. DC current gain (NPN) Figure 5. DC current gain (PNP) Figure 6. Collector-emitter saturation voltage (NPN) Figure 7. Collector-emitter saturation voltage (PNP) Figure 8. Base-emitter saturation voltage (NPN) Figure 9. Base-emitter saturation voltage (PNP) Figure 10. Base-emitter voltage (NPN) Figure 11. Base-emitter voltage (PNP) Figure 12. Resistive load switching time (NPN, on) Figure 13. Resistive load switching time (PNP, on) Figure 14. Resistive load switching time (NPN, off) Figure 15. Resistive load switching time (PNP, off) 2.2 Test circuit Figure 16. Resistive load switching test circuit 3 Package mechanical data 4 Revision history Table 4. Document revision history