Datasheet 2N5060, 2N5061, 2N5062, 2N5064 (ON Semiconductor) - 4
| Fabricante | ON Semiconductor |
| Descripción | Sensitive Gate Silicon Controlled Rectifiers 0.8 A RMS in TO-92 package |
| Páginas / Página | 9 / 4 — 2N5060 Series. CURRENT DERATING. Figure 4. Maximum Non−Repetitive Surge … |
| Formato / tamaño de archivo | PDF / 208 Kb |
| Idioma del documento | Inglés |
2N5060 Series. CURRENT DERATING. Figure 4. Maximum Non−Repetitive Surge Current. Figure 3. Typical Forward Voltage
Línea de modelo para esta hoja de datos
Versión de texto del documento
2N5060 Series CURRENT DERATING
5.0 10 7.0 3.0 (AMP) 5.0 2.0 TJ = 110°C 25°C 3.0 1.0 2.0 , PEAK SURGE CURRENT (AMP) 0.7 I TSM 0.5 1.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 TE CURRENT A 0.3 NUMBER OF CYCLES
Figure 4. Maximum Non−Repetitive Surge Current
0.2 ANEOUS ON‐ST 0.8 180° ANT 0.1 120° a , INST 0.07 60° 90° i T 0.6 a = CONDUCTION ANGLE a 0.05 TTS) = 30° A VERAGE POWER A 0.4 0.03 TION (W A dc 0.02 , MAXIMUM DISSIP 0.2 V) (AP 0.01 0 0 0.5 1.0 1.5 2.0 2.5 0 0.1 0.2 0.3 0.4 0.5 vT, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS) IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
Figure 3. Typical Forward Voltage Figure 5. Power Dissipation www.onsemi.com 4
5.0 10 7.0 3.0 (AMP) 5.0 2.0 TJ = 110°C 25°C 3.0 1.0 2.0 , PEAK SURGE CURRENT (AMP) 0.7 I TSM 0.5 1.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 TE CURRENT A 0.3 NUMBER OF CYCLES
Figure 4. Maximum Non−Repetitive Surge Current
0.2 ANEOUS ON‐ST 0.8 180° ANT 0.1 120° a , INST 0.07 60° 90° i T 0.6 a = CONDUCTION ANGLE a 0.05 TTS) = 30° A VERAGE POWER A 0.4 0.03 TION (W A dc 0.02 , MAXIMUM DISSIP 0.2 V) (AP 0.01 0 0 0.5 1.0 1.5 2.0 2.5 0 0.1 0.2 0.3 0.4 0.5 vT, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS) IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
Figure 3. Typical Forward Voltage Figure 5. Power Dissipation www.onsemi.com 4