Datasheet BSS316N (Infineon) - 3

BSS316N Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics
Input capacitance C iss - 71 94 pF V Output capacitance C GS=0 V, V DS=15 V, oss - 26 35 f =1 MHz Reverse transfer capacitance Crss - 5 7 Turn-on delay time t d(on) - 3.4 - ns Rise time t r - 2.3 - V DD=15 V, V GS=10 V, Turn-off delay time t I D=1.4 A, R G=6 Ω d(off) - 5.8 - Fall time t f - 1 - Gate Charge Characteristics Gate to source charge Q gs - 0.3 - nC Gate to drain charge Q gd - 0.2 - V DD=15 V, I D=1.4 A, Gate charge total V Q GS=0 to 5 V g - 0.6 - Gate plateau voltage V plateau - 3.4 - V
Reverse Diode
Diode continous forward current I S - - 0.5 A T A=25 °C Diode pulse current I S,pulse - - 5.6 V Diode forward voltage GS=0 V, I F=1.4 A, V SD - 0.8 1.1 V T j=25 °C Reverse recovery time t rr - 9.1 - ns V R=10 V, I F=1.4 A, Reverse recovery charge di Q F/dt =100 A/µs rr - 2.6 - nC Rev 2.3 page 3 2011-07-06