Datasheet EPC23108 (Efficient Power Conversion)

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eGaN® IC DATASHEET
EPC23108
EPC23108 – ePower™ Stage IC
VIN , 100 V ILoad , 35 A
PRELIMINARY HAL April 16 2026
The ePowerTM Stage IC Product Family integrates input logic interface, high-side level
Questions:
shifting, synchronous bootstrap charging, and gate drivers along with eGaN output
Ask a GaN
FETs into one monolithic integrated circuit in an MSL1 QFN package, using EPC’s
Expert 23108 A YYYY
proprietary GaN IC technology. The result is a Power Stage IC that translates logic level
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control signals into a high voltage and high current power stage, which is simpler to Package size: design, smaller in size and easier to manufacture while being more efficient to operate. 3.5 x 5 mm
Key Parameters EPC23108 ePowerTM Stage IC PARAMETER VALUE UNIT Applications
Continuous power stage load current TJ = 25°C 35 A • Motor drive inverters Operating PWM frequency (maximum) 3 MHz • Buck, boost, buck-boost converters Absolute maximum input voltage 100 Operating input voltage range 80 V • Half-bridge, full bridge LLC converters Nominal bias supply voltage 5 • Class D audio amplifiers Output current and PWM frequency ratings are specified at ambient temperature of 25°C. See the Application Information
Features
section for rating methodologies, test conditions, thermal management techniques and thermal derating curves. • Integrated high-side and low-side eGaN® FET with internal gate driver and level shifter
Device Information
• 5 V external bias supply
PART NUMBER Rated RDS(on) for HS and LS FETs at 25 °C QFN Package Size (mm)
• 3.3 V or 5 V CMOS input logic levels
EPC23108
5.2 mΩ + 5.2 mΩ typ 3.5 x 5 • Independent high-side and low-side control inputs All exposed pads feature wettable flanks that al ow side wall solder inspection. High voltage and low voltage pads • Logic lockout commands both FETs off when inputs are are separated by 0.6 mm spacing to meet IPC rules. both high at same time • External resistors to tune SW switching times
Figure 1: Typical Application
• Robust level shifter operation for hard and soft VIN + CBOOT + VDRV VBOOT 48 V switching conditions 2.2 μF RDRV 5 V RDRV RBOOT 2.2 μF RBOOT • Synchronous charging for high-side bootstrap supplies VDD VPHASE HIN1 • Standby function for low quiescent current mode 100 nF HSIN SW LIN1 LSIN PGND • Fast PWM shutdown when (SD/STB) pul ed low SD/STB AGND Shutdown • Power-on-reset for low-side and high-side power
EPC23108
supplies VIN CBOOT • Power stage high impedance guaranteed in absence of VDRV VBOOT 2.2 μF RDRV RDRV RBOOT 2.2 μF VDRV / VBOOT supplies RBOOT VDD VPHASE HIN2 • 0% and 100% duty capable 100 nF HSIN SW LIN2 • Thermal y enhanced QFN package with exposed top LSIN PGND SD/STB AGND for low thermal resistance from junction to top-side
EPC23108
heatsink VIN VDRV CBOOT VBOOT Scan QR code or click 2.2 μF RDRV RDRV RBOOT 2.2 μF link below for more RBOOT VDD VPHASE information including HIN3 100 nF HSIN SW reliability reports, device LIN3 LSIN PGND models, demo boards! SD/STB AGND
EPC23108 https://l.ead.me/EPC23108
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