Datasheet ZXM61P03F (Diodes) - 6
| Fabricante | Diodes |
| Descripción | 30V P-Channel Enhancement Mode MOSFET in SOT23 package |
| Páginas / Página | 7 / 6 — ZXM61P03F. TYPICAL CHARACTERISTICS. Capacitance v Drain-Source Voltage. … |
| Formato / tamaño de archivo | PDF / 277 Kb |
| Idioma del documento | Inglés |
ZXM61P03F. TYPICAL CHARACTERISTICS. Capacitance v Drain-Source Voltage. Gate-Source Voltage v Gate Charge
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ZXM61P03F TYPICAL CHARACTERISTICS
) 300 14 Vgs=0V V( ID=-0.6A f=1MHz e ) 250 g 12 F a p t ( l Ciss o 10 e 200 Coss V c VDS=-24V n Crss e a c 8 t r i VDS=-15V 150 c u a o 6 p S- a 100 e C t 4 - a G C 50 - 2 S G 0 V- 0 0.1 1 10 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS - Drain Source Voltage (V) Q -Charge (nC)
Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge
Current regulator QG 12V 50k Same as D.U.T V QGS QGD G VDS IG D.U.T ID VGS Charge
Basic gate charge waveform Gate charge test circuit
VDS 90% RD VGS VDS RG VCC 10% VGS tr td(off) tr td(on) t(on) t(on)
Switching time waveforms Switching time test circuit ISSUE 1 - OCTOBER 2005 S E M I C O N D U C T O R S 6
) 300 14 Vgs=0V V( ID=-0.6A f=1MHz e ) 250 g 12 F a p t ( l Ciss o 10 e 200 Coss V c VDS=-24V n Crss e a c 8 t r i VDS=-15V 150 c u a o 6 p S- a 100 e C t 4 - a G C 50 - 2 S G 0 V- 0 0.1 1 10 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS - Drain Source Voltage (V) Q -Charge (nC)
Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge
Current regulator QG 12V 50k Same as D.U.T V QGS QGD G VDS IG D.U.T ID VGS Charge
Basic gate charge waveform Gate charge test circuit
VDS 90% RD VGS VDS RG VCC 10% VGS tr td(off) tr td(on) t(on) t(on)
Switching time waveforms Switching time test circuit ISSUE 1 - OCTOBER 2005 S E M I C O N D U C T O R S 6