Datasheet TP65B110HRU (Renesas)
| Fabricante | Renesas |
| Descripción | 650V 110mΩ High-Voltage GaN Bidirectional Switch in TOLT Package |
| Páginas / Página | 15 / 1 — Description. Features. Benefits. Applications. Specifications. Product … |
| Formato / tamaño de archivo | PDF / 1.6 Mb |
| Idioma del documento | Inglés |
Description. Features. Benefits. Applications. Specifications. Product Diagrams. TP65B110HRU TOLT. Symbol
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Datasheet TP65B110HRU 650V Bi-Directional Switch (BDS) in TOLT
Description Features
The TP65B110HRU is a 650V 110mΩ common-drain Bi-Directional Switch (BDS) based on Renesas’ ■ Insulated gate with high threshold SuperGaN® Bi-Directional platform. It conducts and ■ Built-in freewheeling diode with low voltage drop blocks current in both directions with smallest ■ Negligible reverse recovery charge footprint and a best-in-class switching figure of merit. ■ Low Qg and low QOSS The product combines a bidirectional, high-voltage, ■ High dv/dt immunity depletion-mode GaN with two normally-off low- ■ Soft- and hard-switching capability voltage silicon MOSFETs to provide superior performance, with high threshold for standard gate- ■ Transient over-voltage capability drive compatibility, easy integration, and robust ■ DC bias withstand capability reliability for advanced power applications. ■ 2kV ESD capability (HBM and CDM) ■
Benefits
JEDEC qualified ■ RoHS compliant and Halogen-free packaging ■ Ultra-fast switching for high ef iciency, high power- density converters
Applications
■ Smaller footprint and lower cost versus back-to- ■ PV inverters back unidirectional switches ■ Battery chargers ■ High noise immunity and easy to drive, with no ■ Motor drives negative voltage required ■ AI datacenter and telecom power supplies ■ Reliable under the widest range of operating ■ UPS conditions, including AC and DC ■ Facilitates cost-effective GaN adoption, reducing
Specifications
system size, weight, and costs VSS (V) ±650
Product Diagrams
VSS(TR) (V) ±800 VGS(TH) (V) 3 RSS(on) (mΩ) typical 110 QOSS (nC) typical 54 QG (nC) typical 6.8
TP65B110HRU TOLT Symbol
R07DS1683EU0100 Rev.1.00 Page 1 Mar 10, 2026 © 2026 Renesas Electronics Document Outline 1. Pin Information 1.1 Pin Assignments 1.2 Pin Descriptions 2. Specifications 2.1 Absolute Maximum Ratings 2.2 Thermal Specifications 2.3 Recommended Operating Conditions 2.4 Gate Characteristics 2.5 On-State Characteristics 2.6 Off-State Characteristics 2.7 Dynamic Characteristics 2.8 Diode Characteristics 3. Typical Characteristics 4. Test Circuits and Waveforms 5. Modes of Operation 6. Device Architecture 7. Design Considerations 8. Package Outline Drawings 9. Related Information 10. Ordering Information 11. Revision History
Description Features
The TP65B110HRU is a 650V 110mΩ common-drain Bi-Directional Switch (BDS) based on Renesas’ ■ Insulated gate with high threshold SuperGaN® Bi-Directional platform. It conducts and ■ Built-in freewheeling diode with low voltage drop blocks current in both directions with smallest ■ Negligible reverse recovery charge footprint and a best-in-class switching figure of merit. ■ Low Qg and low QOSS The product combines a bidirectional, high-voltage, ■ High dv/dt immunity depletion-mode GaN with two normally-off low- ■ Soft- and hard-switching capability voltage silicon MOSFETs to provide superior performance, with high threshold for standard gate- ■ Transient over-voltage capability drive compatibility, easy integration, and robust ■ DC bias withstand capability reliability for advanced power applications. ■ 2kV ESD capability (HBM and CDM) ■
Benefits
JEDEC qualified ■ RoHS compliant and Halogen-free packaging ■ Ultra-fast switching for high ef iciency, high power- density converters
Applications
■ Smaller footprint and lower cost versus back-to- ■ PV inverters back unidirectional switches ■ Battery chargers ■ High noise immunity and easy to drive, with no ■ Motor drives negative voltage required ■ AI datacenter and telecom power supplies ■ Reliable under the widest range of operating ■ UPS conditions, including AC and DC ■ Facilitates cost-effective GaN adoption, reducing
Specifications
system size, weight, and costs VSS (V) ±650
Product Diagrams
VSS(TR) (V) ±800 VGS(TH) (V) 3 RSS(on) (mΩ) typical 110 QOSS (nC) typical 54 QG (nC) typical 6.8
TP65B110HRU TOLT Symbol
R07DS1683EU0100 Rev.1.00 Page 1 Mar 10, 2026 © 2026 Renesas Electronics Document Outline 1. Pin Information 1.1 Pin Assignments 1.2 Pin Descriptions 2. Specifications 2.1 Absolute Maximum Ratings 2.2 Thermal Specifications 2.3 Recommended Operating Conditions 2.4 Gate Characteristics 2.5 On-State Characteristics 2.6 Off-State Characteristics 2.7 Dynamic Characteristics 2.8 Diode Characteristics 3. Typical Characteristics 4. Test Circuits and Waveforms 5. Modes of Operation 6. Device Architecture 7. Design Considerations 8. Package Outline Drawings 9. Related Information 10. Ordering Information 11. Revision History