Datasheet 1N5615GP, 1N5617GP, 1N5619GP, 1N5621GP, 1N5623GP (Vishay) - 3

Not for New Designs
1N5615GP, 1N5617GP, 1N5619GP, 1N5621GP, 1N5623GP www.vishay.com Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted) 1.00 100 0.75 ent (μA) 10 T = 125 °C J e Curr s 0.50 1 T = 75 °C J Rever s 0.25 0.1 T = 25 °C J Resistive or Inductive Load tantaneou s 0.375" (9.5 mm) Lead Length In Average Forward Rectified Current (A) 0 0.01 25 50 75 100 125 150 175 0 20 40 60 80 100 Ambient Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics 60 100 T = 25 °C J T = 55 °C f = 1.0 MHz 50 A 8.3 ms Single Half Sine-Wave V = 50 mV sig p-p 40 urge Current (A) S 30 10 20 Junction Capacitance (pF) 10 Peak Forward 0 1 1 10 100 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance 10 100 1 10 Forward Current (A) s T = 25 °C J Pulse Width = 300 μs 0.1 1 1 % Duty Cycle tantaneou s pical Thermal Impedance (°C/W) In Ty 0.01 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 05-Oct-2021 3 Document Number: 88522 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000