Datasheet SI2310 (Youtai) - 2
| Fabricante | Youtai |
| Descripción | 60V N-ChanneI MOSFET in SOT-23 package |
| Páginas / Página | 7 / 2 — UMW SI2310A. 5.Electrical Characteristics TA= 25°C. Parameter. Symbol. … |
| Formato / tamaño de archivo | PDF / 226 Kb |
| Idioma del documento | Inglés |
UMW SI2310A. 5.Electrical Characteristics TA= 25°C. Parameter. Symbol. Conditions. Min Typ Max Units
Línea de modelo para esta hoja de datos
Versión de texto del documento
www.umw-ic.com
UMW SI2310A
60V N-ChanneI MOSFET
5.Electrical Characteristics TA= 25°C Parameter Symbol Conditions Min Typ Max Units
Drain-Source Breakdown Voltage VDSS ID=250µA, VGS=0V 60 V VDS=60V, VGS=0V 10 Zero Gate Voltage Drain Current IDSS µA VDS=48V, VGS=0V, TJ=70°C 25 Gate-Body leakage current IGSS VDS=0V, VGS=±20V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250μA 1 3 V VGS=10V, ID=3A 67 80 Static Drain-Source On-Resistance R mΩ DS(ON) VGS=4.5V, ID=2A 77 95 Forward Transconductance gFS VDS=5V, ID=3A 5 S Input Capacitance Ciss 490 780 Output Capacitance Coss VGS=0V, VDS=25V, f=1MHz 55 pF Reverse Transfer Capacitance Crss 40 Total Gate Charge Qg VDS=48V 6 10 Gate Source Charge Qgs VGS=4.5V 1.6 nC Gate Drain Charge Qgd ID=3A 3 Turn-On DelayTime tD(on) 6 VGS=10V, VDS=30V Turn-On Rise Time tr 5 RD=30Ω, RGEN=3.3Ω Turn-Off DelayTime tD(off) 16 ns ID=1A Turn-Off Fall Time tf 3 Body Diode Reverse Recovery Time trr IS=3A, dI/dt=100A/μs 25 Body Diode Reverse Recovery Charge Qrr IS=3A, dI/dt=100A/μs 26 nC Diode Forward Voltage VSD IS=1.2A, VGS=0V 1.2 V UTD Semiconductor Co.,Limited 2 of 7 Nov.2024
UMW SI2310A
60V N-ChanneI MOSFET
5.Electrical Characteristics TA= 25°C Parameter Symbol Conditions Min Typ Max Units
Drain-Source Breakdown Voltage VDSS ID=250µA, VGS=0V 60 V VDS=60V, VGS=0V 10 Zero Gate Voltage Drain Current IDSS µA VDS=48V, VGS=0V, TJ=70°C 25 Gate-Body leakage current IGSS VDS=0V, VGS=±20V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250μA 1 3 V VGS=10V, ID=3A 67 80 Static Drain-Source On-Resistance R mΩ DS(ON) VGS=4.5V, ID=2A 77 95 Forward Transconductance gFS VDS=5V, ID=3A 5 S Input Capacitance Ciss 490 780 Output Capacitance Coss VGS=0V, VDS=25V, f=1MHz 55 pF Reverse Transfer Capacitance Crss 40 Total Gate Charge Qg VDS=48V 6 10 Gate Source Charge Qgs VGS=4.5V 1.6 nC Gate Drain Charge Qgd ID=3A 3 Turn-On DelayTime tD(on) 6 VGS=10V, VDS=30V Turn-On Rise Time tr 5 RD=30Ω, RGEN=3.3Ω Turn-Off DelayTime tD(off) 16 ns ID=1A Turn-Off Fall Time tf 3 Body Diode Reverse Recovery Time trr IS=3A, dI/dt=100A/μs 25 Body Diode Reverse Recovery Charge Qrr IS=3A, dI/dt=100A/μs 26 nC Diode Forward Voltage VSD IS=1.2A, VGS=0V 1.2 V UTD Semiconductor Co.,Limited 2 of 7 Nov.2024