Datasheet 2SB649 (Unisonic Technologies) - 4

2SB649/A PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS
(TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO -180 V 2SB649 -120 V Collector-Emitter Voltage VCEO 2SB649A -160 V Emitter-Base Voltage VEBO -5 V Collector Current IC -1.5 A Collector Peak Current lC(PEAK) -3 A SOT-223 1 W SOT-89 0.5 W TO-220/ TO-220F 2 W Power Dissipation TO-252 2 W (TA=25°C) TO-126/TO-126S 1.3 W TO-126C 1 W TO-92/TO-92NL 0.6 W SOT-223 PD 8.33 W SOT-89 3.29 W TO-220 30 W Power Dissipation TO-220F 24 W (TC=25°C) TO-252 27.78 W TO-126/TO-126S 20 W TO-126C 12.5 W TO-92/TO-92NL 1.56 W Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT SOT-223 15 °C/W SOT-89 38 °C/W TO-220 4.16 °C/W TO-220F 5.2 °C/W Junction to Case θJC TO-252 4.5 °C/W TO-126/TO-126S 6.25 °C/W TO-126C 10 °C/W TO-92/TO-92NL 80 °C/W Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
UNISONIC TECHNOLOGIES CO., LTD
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