Datasheet 2SD669 (Unisonic Technologies) - 4

2SD669/A NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINL
(TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINLS UNIT Collector-Base Voltage VCBO 180 V 2SD669 120 Collector-Emitter Voltage VCEO V 2SD669A 160 Emitter-Base Voltage VEBO 5 V Collector Current IC 1.5 A Collector Peak Current lC(PEAK) 3 A Base Current IB 0.5 A SOT-223 1 W SOT-89 0.5 W SOT-23 0.35 W Power Dissipation TO-220 /TO-220F 2 W (TA=25°C) TO-251/TO-252 2 W TO-126/TO-126S 1.3 W TO-126C 1 W TO-92/TO-92NL 0.6 W SOT-223 PD 8.93 W SOT-89 3.29 W SOT-23 1.14 W TO-220 30 W Power Dissipation TO-220F 24 W (TC=25°C) TO-251/TO-252 27.78 W TO-126/TO-126S 20 W TO-126C 12.5 W TO-92/TO-92NL 1.56 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
HERMAL DATA
PARAMETER SYMBOL RATINLS UNIT SOT-223 14 °C/W SOT-89 38 °C/W SOT-23 110 °C/W TO-220 4.16 °C/W Junction to Case TO-220F θJC 5.2 °C/W TO-251/TO-252 4.5 °C/W TO-126/TO-126S 6.25 °C/W TO-126C 10 °C/W TO-92/TO-92NL 80 °C/W Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
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