Datasheet Si2333DS (Vishay) - 5

FabricanteVishay
DescripciónP-Channel 12-V (D-S) MOSFET in SOT-23 (TO-236) package
Páginas / Página8 / 5 — Si2333DS. TYPICAL CHARACTERISTICS. Normalized Thermal Transient …
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Si2333DS. TYPICAL CHARACTERISTICS. Normalized Thermal Transient Impedance, Junction-to-Ambient

Si2333DS TYPICAL CHARACTERISTICS Normalized Thermal Transient Impedance, Junction-to-Ambient

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Si2333DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 ransient 0.2 Notes: T e P 0.1 DM fectiv 0.1 mal Impedance 0.05 t1 ed Ef t2 t1 Ther 1. Duty Cycle, D = t2 maliz 0.02 2. Per Unit Base = R thJA = 120 °C/W Nor 3. T (t) JM - TA = PDMZthJA 4. Surface Mounted Single Pulse 0.01 10- 3 10- 2 10- 1 10- 4 1 10 100 600 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72023. Document Number: 72023 www.vishay.com S09-0130-Rev. C, 02-Feb-09 5