Datasheet 2SB772 (Inchange Semiconductor) - 2
| Fabricante | Inchange Semiconductor |
| Descripción | Silicon PNP Power Transistors in TO-126 package |
| Páginas / Página | 5 / 2 — Inchange Semiconductor. Product Specification. Silicon PNP Power … |
| Formato / tamaño de archivo | PDF / 106 Kb |
| Idioma del documento | Inglés |
Inchange Semiconductor. Product Specification. Silicon PNP Power Transistors 2SB772. CHARACTERISTICS. Tj=25
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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB772 CHARACTERISTICS Tj=25
℃
unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -30 V VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A -0.3 -0.5 V VBEsat Base-emitter saturation voltage IC=-2.0A ;IB=-0.2A -1.0 -2.0 V ICBO Collector cut-off current VCB=-30V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1.0 μA hFE-1 DC current gain IC=-20mA ; VCE=-2V 30 hFE-2 DC current gain IC=-1A ; VCE=-2V 60 400 fT Transition frequency IC=-0.1A ; VCE=-5V 80 MHz COB Collector output capacitance IE=0; f=1MHz ; VCB=-10V 55 pF
hFE-2 Classifications
R Q P E 60-120 100-200 160-320 200-400 2
℃
unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -30 V VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A -0.3 -0.5 V VBEsat Base-emitter saturation voltage IC=-2.0A ;IB=-0.2A -1.0 -2.0 V ICBO Collector cut-off current VCB=-30V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1.0 μA hFE-1 DC current gain IC=-20mA ; VCE=-2V 30 hFE-2 DC current gain IC=-1A ; VCE=-2V 60 400 fT Transition frequency IC=-0.1A ; VCE=-5V 80 MHz COB Collector output capacitance IE=0; f=1MHz ; VCB=-10V 55 pF
hFE-2 Classifications
R Q P E 60-120 100-200 160-320 200-400 2