Datasheet PMV30UN (Nexperia) - 7

FabricanteNexperia
DescripciónN-channel TrenchMOS ultra low level FET in SOT23 package
Páginas / Página12 / 7 — Philips Semiconductors. PMV30UN. TrenchMOS™ ultra low level FET. Fig 9. …
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Philips Semiconductors. PMV30UN. TrenchMOS™ ultra low level FET. Fig 9. Gate-source threshold voltage as a function of

Philips Semiconductors PMV30UN TrenchMOS™ ultra low level FET Fig 9 Gate-source threshold voltage as a function of

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Philips Semiconductors PMV30UN
µ
TrenchMOS™ ultra low level FET
03aj65 03aj64 1 10-3 VGS(th) (V) ID 0.8 (A) typ 10-4 0.6 min typ min 0.4 10-5 0.2 0 10-6 -60 0 60 120 180 0 0.2 0.4 0.6 0.8 1 Tj (°C) VGS (V) ID = 1 mA; VDS = VGS Tj = 25 °C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of junction temperature. gate-source voltage.
03am38 103 C Ciss (pF) 102 Coss Crss 10 10-1 1 10 102 VDS (V) VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 11569 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data Rev. 01 — 25 June 2003 7 of 12
Document Outline 1. Product profile 1.1 Description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Limiting values 4. Thermal characteristics 4.1 Transient thermal impedance 5. Characteristics 6. Package outline SOT23 7. Revision history 8. Data sheet status 9. Definitions 10. Disclaimers 11. Trademarks